Polarizing element and liquid crystal projector

ABSTRACT

A polarizing plate having a desired extinction ratio in a visible light region and light resistance against intense light, and a liquid crystal projector using the above polarizing plate are provided. A polarizing element includes a substrate transparent to visible light, and inorganic particle layers in each of which inorganic particles are linearly disposed, the inorganic particle layers being disposed on the substrate at predetermined intervals to form a wire grid structure, the inorganic particles each have an elliptical shape having a major axis of the inorganic particles in the disposed direction and minor axis in a direction perpendicular thereto.

CROSS REFERENCES TO RELATED APPLICATIONS

The present application is a continuation application of Reissueapplication Ser. No. 14/815,565, filed on Jul. 31, 2015, which is acontinuation application of Reissue application Ser. No. 13/912,572,filed on Jun. 7, 2013, which is an application for reissue of U.S. Pat.No. 7,957,062, filed as application Ser. No. 12/026,434 on Feb. 5, 2008,and where Reissue application Ser. No. 14/815,565, filed on Jul. 31,2015 is an application for reissue of U.S. Pat. No. 7,957,062, filed asapplication Ser. No. 12/026,434 on Feb. 5, 2008, which claims priorityto Japanese Patent Application JP 2007-026348 and JP 2007-170585 filedin the Japanese Patent Office on Feb. 6, 2007 and Jun. 28, 2007,respectively, the entire contents of each of which are incorporatedherein by reference.

BACKGROUND

The present application relates to a polarizing element havingdurability against intense light and a liquid crystal projector usingthe polarizing element.

In a liquid crystal display device, it is necessary to dispose at leastone polarizing plate at a liquid crystal panel surface based on an imageforming principle. The function of the polarizing plate is to absorb oneof two polarized components (so-called P polarized wave and S polarizedwave) perpendicular to each other and to transmit the other component.As the polarizing plate described above, a dichroic polarizing plate inthe form of a film containing an iodine-based or a dye-based highmolecular weight organic material has been frequently used in the past.

As a general method for manufacturing a dichroic polarizing plate, amethod has been used having the steps of dyeing a polyvinylalcohol-based film with a dichroic material, such as iodine, and thenperforming crosslinking using a crosslinking agent, followed byperforming uniaxial drawing. Since being formed by the drawing asdescribed above, this type of polarizing plate is liable to shrink. Inaddition, since a polyvinyl alcohol-based film is formed of ahydrophilic polymer, particularly under humidified conditions, the filmis very liable to deform. In addition, since the film is used, themechanical strength thereof is inevitably insufficient to be used as anelement. In order to avoid the above problem, a method for using atransparent protective film may be used in some cases.

In recent years, liquid crystal display devices have been increasinglyused in various applications, and the performances of the devices havealso been improved. Concomitant with the trend described above,individual elements forming the liquid crystal display devices arerequested to have high reliability and durability. For example, in aliquid crystal display device, such as a transmission type liquidcrystal projector, using a light source having a large quantity oflight, a polarizing plate receives intense radiation. Hence, thepolarizing plate used in the above device as described above isrequested to have superior heat resistance. However, since thefilm-based polarizing plate described above is formed of an organicmaterial, improvement in properties thereof has been naturally limitedto a certain level.

In order to solve the problem described above, an inorganic polarizingplate having superior heat resistance has been sold under the trade name“Polarcor” by Corning Inc., USA. This polarizing plate is formed ofsilver particles dispersed in glass and does not use an organic materialsuch as a film, and the principle of this polarizing plate is to useplasma resonance of island-shaped particles. That is, light absorptioncaused by surface plasma resonance which occurs when light is incidenton island-shaped particles of a noble metal or a transition metal isused, and an absorption wavelength is influenced by the particle shapeand the dielectric constant of the surrounding material. When theisland-shaped particle has an ellipsoid shape, since resonancewavelengths in the long-axis and the short-axis directions are differentfrom each other, polarization properties are obtained thereby; inparticular, a polarized component parallel with the long axis at a longwavelength side is absorbed, and a polarized component parallel with theshort axis is transmitted. However, in the case of Polarcor, awavelength region in which the polarization properties are obtained is aregion in the vicinity of an infrared region, and a visible light regionrequested for liquid crystal display devices is not included. This isbecause of the physical properties of silver used for the island-shapedparticles.

In U.S. Pat. No. 6,772,608, a UV polarizing plate formed byprecipitating particles in glass by thermal reduction using the aboveprinciple has been disclosed, and as a particular example, silver usedas metal particles has also been disclosed. In this case, it is believedthat absorption in the short axis direction is used, which is differentfrom the case of Polarcor described above. Although the polarizing platefunctions at around 400 nm as shown in FIG. 1, since the extinctionratio is small and an absorption band is very narrow, a polarizing platecapable of covering the entire visible light region may not be obtainedeven if Polarcor and the technique of U.S. Pat. No. 6,772,608 are usedin combination.

In addition, in J. Opt. Soc. Am. A Vol. 8, No. 4, pp. 619 to 624, atheoretical analysis of an inorganic polarizing plate using plasmaresonance of metal island-shaped particles has been disclosed. Accordingto this document, it has been described that a resonance wavelength ofaluminum particles is shorter than that of silver particles byapproximately 200 nm, and hence when aluminum particles are used, apolarizing plate, which can be used in a visible light region, isprobably manufactured.

In addition, in Japanese Unexamined Patent Application Publication No.2000-147253, various methods for forming a polarizing plate usingaluminum particles have been disclosed. Among the above methods, it hasbeen disclosed that glass primarily formed of silicate is not preferableas a substrate since reaction occurs between the glass and aluminum, andcalcium aluminoborate glass is suitably used (in paragraphs 0018 and0019). However, glass formed of silicate has been widely commerciallyused as an optical glass, and highly reliable products thereof areavailable at a reasonable price; hence, when the glass formed ofsilicate is not suitably used, it is disadvantageous from an economicalpoint of view. In addition, a method for forming island-shaped particlesby etching using a resist pattern has also been disclosed (paragraphs0037 and 0038). A polarizing plate used in a projector is generallyrequested to have a size of approximately several centimeters and a highextinction ratio. Accordingly, in order to form a visible-lightpolarizing plate, a resist pattern size is requested to be sufficientlysmaller than a visible light wavelength, that is, to be several tens ofnanometers, and in addition, in order to obtain a high extinction ratio,a pattern is preferably formed to have a high density. In addition, inorder to use a polarizing plate for a projector purpose, a polarizingplate having a large area is desirably formed. However, as a method forforming a high density fine pattern by lithography, disclosed in thispatent document, electron beam lithography is to be desirably used inorder to obtain the pattern as described above. However, since theelectron beam lithography is a method for drawing each pattern usingelectron beams, the productivity is inferior, and hence this techniqueis not practical.

In addition, in Japanese Unexamined Patent Application Publication No.2001-147253, it has been disclosed that aluminum is removed by chlorineplasma; however, in general, when etching is performed as describedabove, chlorides adhere to sidewalls of an aluminum pattern. Thechlorides may be removed by a commercially available wet etching liquid(such as SST-A2 by Tokyo Ohka Kogyo Co., Ltd.); however, since this typeof chemical liquid, which reacts with aluminum chloride compounds, alsoreacts with aluminum although the etching rate is slow, it is difficultto realize a desired pattern shape by the method described above.

Furthermore, in Japanese Unexamined Patent Application Publication No.2000-147253, as another method, a method has been disclosed in whichaluminum is deposited on a patterned photoresist by oblique deposition,followed by removing the photoresist (paragraphs 0045 and 0047).However, it is believed that in order to ensure adhesion between asubstrate and aluminum, aluminum is also preferably deposited on thesubstrate to a certain extent. However, it means that the shape of thealuminum film thus deposited is different from a prolate spheroid, suchas a prolate ellipsoid, which is a suitable shape disclosed in paragraph0015. In addition, in paragraph 0047, it has been disclosed that byanisotropic etching performed perpendicular to the surface, an excessdeposit is removed. In order to obtain the function as the polarizingplate, shape anisotropic properties of aluminum are significantlyimportant. Hence, it is believed important to adjust the amount ofaluminum deposited on the resist portion and that on the substratesurface by etching to obtain a desired shape; however, it may be verydifficult to control the amount of aluminum having a size of submicronor less, such as 0.05 μm, as disclosed in paragraph 0047, and hence itis questionable whether the method described above is a highlyproductive manufacturing method. In addition, as properties of thepolarizing plate, a high transmittance is desirable in the transmissionaxis direction; however, when glass is used as the substrate, ingeneral, several percentage of light is inevitably reflected on theglass interface, and since countermeasures have not been taken therefor,a high transmittance is difficult to obtain.

In addition, according to Japanese Unexamined Patent ApplicationPublication No. 2002-372620, a polarizing plate formed by obliquedeposition has been disclosed. This method is to obtain polarizationproperties by forming fine columnar structures by oblique depositionusing a transparent and an opaque substance with respect to wavelengthsin a service bandwidth, and since a fine pattern can be easily obtainedby this method unlike the method disclosed in U.S. Pat. No. 6,772,608,it is believed that the method has a high productivity; however,problems still exist. That is, the aspect ratio of a fine columnarstructure which is first formed from the substance opaque to thewavelengths in the service bandwidth, the distance between the finecolumnar structures, and the linearity thereof are important factors toobtain superior polarization properties and are to be intentionallycontrolled in view of reproducibility of the properties. However, inthis method, since the columnar structures are formed by a phenomenon inwhich initial deposited layers made of deposition particles form shadowareas, and following flying particles are not deposited on the shadowareas, it has been difficult to intentionally control the factorsdescribed above. As a method for improving the above situation, a methodfor forming polishing marks in the substrate by rubbing performed beforedeposition has been described; however, the particle diameter of thedeposition film is approximately at most several tens of nanometers, andin order to control the anisotropic properties of this type ofparticles, it might be desired to intentionally form pitches on theorder of submicron or less. However, by general polishing sheets or thelike, pitches on the order of approximately submicron are the limit, andhence fine polishing marks as described above are difficult to form byrubbing. In addition, since the resonance wavelength of Al particleslargely depends on the refractive index of the surrounding material, asdescribed above, in this case, combination between the transparent andthe opaque substances is important; however, in Japanese UnexaminedPatent Application Publication No. 2002-372620, the combination toobtain superior polarization properties in a visible light region hasnot been described. In addition, as is the case disclosed in U.S. Pat.No. 6,772,608, when glass is generally used as the substrate, severalpercentage of light is inevitably reflected on the glass interface, andcountermeasures have not been taken therefor.

In addition, in Applied Optics Vol. 25, No. 2, 1986, pp. 311 to 314, apolarizing plate for infrared communication, which is called Lamipol,has been described. This polarizing plate has a laminate structure of Aland SiO2, and according to this document, a very high extinction ratiois obtained. In addition, in J. Lightwave Tec. Vol. 15, No. 6, 1997, pp.1042 to 1050, it has been disclosed that when Ge is used instead of Alwhich is responsible for the light absorption of Lamipol, a highextinction ratio can be realized at a wavelength of 1 μm or less. Inaddition, from FIG. 3 of the above document, it may be expected toobtain a high extinction ratio when Te (tellurium) is used. AlthoughLamipol is an absorption type polarizing plate having a high extinctionratio, as described above, since a laminate thickness of an absorptionsubstance and a transmission substance determines the size of a lightreceiving surface, it is not preferably used for a projector polarizingplate which is requested to have a large size of several centimeterssquare.

In U.S. Pat. No. 6,122,103, a wire grid type polarizing plate has beendisclosed. This polarizing plate is formed from fine metal wiresdisposed on a substrate at a pitch smaller than the wavelength of lightin a service bandwidth, and predetermined polarization properties areobtained by reflecting a polarized light component parallel with thefine metal wires and by transmitting a polarized light componentperpendicular thereto.

In addition, in U.S. Pat. No. 6,813,077, a method has been disclosed inwhich a wire grid type polarizing element having a three-layeredstructure is formed by forming dielectric layers and metal layers on ametal lattice so as to cancels light reflected from the metal lattice byan interference effect, and in which a wire grid, which is generally areflection type, is used as an absorption type. It is believed that whenan absorption type polarizing plate is used by utilizing the opticalproperties obtained from a multilayer structure, as described above, thethickness and the optical properties of the metal layer formed on thedielectric layer are important; however, in this patent document, theseimportant properties are not taken into consideration. That is, in thispatent document, the above important properties have not been described,and hence the details have not been known; however, in order to obtainthe interference effect as described above, light is necessary to passthrough the metal layer. When light passes, it means that in this step,part of the light is absorbed in the metal film located at an upperside. By the absorption, the transmittance in the transmission axisdirection is decreased, and this decrease is not preferable as theproperties of the polarization transmission axis; in particular, it isnot preferable for a liquid crystal display device which is requested tohave a high transmittance in a visible light region. That is, apolarizing plate having an absorption effect does not function when theoptical anisotropic properties of an absorption layer are notessentially controlled and is difficult to be used as a practicalpolarizing plate.

In addition, in Japanese Unexamined Patent Application Publication No.2006-323119, an inorganic polarizing plate in which semiconductornanorods are dispersed in glass has been disclosed. It has also beendisclosed that superior polarization properties are obtained in avisible light region; however, since this polarizing plate is formed bya method similar to that for Polarcor of Corning Inc., a drawing step isinevitably performed, and as a result, a large size plate is difficultto obtain.

SUMMARY

It is desirable to provide a polarizing plate, which has a desiredextinction ratio in a visible light region and light resistance againstintense light, and a liquid crystal display device using the abovepolarizing plate.

According to a first embodiment, there is provided a polarizing elementcomprising: a substrate transparent to visible light; and firstinorganic particle layers in each of which first inorganic particles arelinearly disposed on the substrate, the first inorganic particle layersbeing disposed on the substrate at predetermined intervals to form awire grid structure, wherein the first inorganic particles each have anelliptical shape having a major axis in a disposed direction and a minoraxis in a direction perpendicular thereto.

According to a second embodiment, as an optical constant of the firstinorganic particle layers, an optical constant of the first inorganicparticles in the disposed direction is preferably larger than that ofthe first inorganic particles in the direction perpendicular to thedisposed direction.

In addition, according to a third embodiment, as the optical propertiesof the first inorganic particle layers, the refractive index of thefirst inorganic particles in the disposed direction is preferably largerthan that of the first inorganic particles in the directionperpendicular thereto, and an extinction coefficient of the firstinorganic particles in the disposed direction is preferably larger thanthat of the first inorganic particles in the direction perpendicularthereto.

In addition, according to a fourth embodiment, the first inorganicparticle layers are preferably formed by an oblique sputtering method.

According to a fifth embodiment, the first inorganic particlespreferably include a single element selected from Al, Ag, Cu, Au, Mo,Cr, Ti, W, Ni, Fe, Si, Ge, Te, and Sn, an alloy thereof, or a silicidesemiconductor material.

Alternatively, according to a sixth embodiment, the first inorganicparticles preferably include a semiconductor material having a bandgapenergy of 3.1 eV or less.

According to a seventh embodiment, the first inorganic particle layerspreferably have a thickness of 200 nm or less.

In addition, according to an eighth embodiment, the polarizing elementof the first embodiment may further comprise convex portions, which aremade of a material transparent to visible light and which extend in onedirection, provided on the substrate, and the first inorganic particlelayers are each preferably provided on a top part or at least one ofsidewall parts of each of the convex portions.

In addition, according to a ninth embodiment, the polarizing element ofthe first embodiment may further comprise reflection layers ofstrip-shaped thin films, which are made of a metal and which extend inone direction, provided on the substrate at predetermined intervals, andfirst dielectric layers provided on the reflection layers, and the firstinorganic particle layers are preferably provided on the firstdielectric layers at positions corresponding to those of thestrip-shaped thin films.

According to a tenth embodiment, in the above ninth embodiment, thesubstrate is preferably processed by a rubbing treatment so that thedirection of the rubbing treatment corresponds to the disposed directionof the first inorganic particles, and the polarizing element may furthercomprise antireflection layers of inorganic particles having shapeanisotropic properties, the antireflection layers being provided on thesurface of the substrate so that the direction of the inorganicparticles corresponds to the disposed direction of the first inorganicparticles.

According to an eleventh embodiment, the polarizing element according tothe ninth embodiment may further comprise second inorganic particlelayers in each of which second inorganic particles are linearlydisposed; and second dielectric layers, the second inorganic particlelayers and the second dielectric layers forming laminates, wherein atleast one of the laminates is provided on each of the first inorganicparticle layers.

According to a twelfth embodiment, there is provided a polarizingelement comprising: the polarizing element according to the eighthembodiment; and the polarizing element according to the ninthembodiment, wherein the substrates thereof are adhered to each other atthe rear surfaces thereof.

According to a thirteenth embodiment, the polarizing element describedabove may further comprise a polarizing element protective layertransparent to light in a service bandwidth as an outermost surface.

According to a fourteenth embodiment, there is provided a liquid crystalprojector comprising: a lamp; a liquid crystal panel; and the polarizingelement according to one of the first to the thirteenth embodiments.

The polarizing elements of the embodiments each have a desiredextinction ratio in a visible light region and superior durability tothat of a related polarizing element.

In addition, since the liquid crystal projector of the embodimentincludes a polarizing element having superior light resistance againstintense light, a highly reliable liquid crystal projector can berealized.

Additional features and advantages are described herein, and will beapparent from, the following Detailed Description and the figures.

BRIEF DESCRIPTION OF THE FIGURES

FIGS. 1A and 1B are schematic views each showing the structure of apolarizing element of a first embodiment;

FIG. 2 is a cross-sectional view of a concave-convex member of asubstrate;

FIGS. 3A to 3C are cross-sectional views each showing a concave-convexshape of a polarizing element surface of an embodiment;

FIG. 4 is a schematic view showing the structure of oblique sputteringdeposition;

FIGS. 5A and 5B are schematic views each showing the structure of apolarizing element of a second embodiment;

FIGS. 6A and 6B are schematic views each illustrating a function of thepolarizing element shown in FIGS. 5A and 5B;

FIG. 7 is a schematic longitudinal cross-sectional view of a modifiedexample of the structure of the polarizing element shown in FIGS. 5A and5B;

FIG. 8 is a view showing an example (1) of an emission-surfacestray-light countermeasure of the polarizing element shown in FIGS. 5Aand 5B;

FIG. 9 is a view showing an example (2) of the emission-surfacestray-light countermeasure of the polarizing element shown in FIGS. 5Aand 5B;

FIGS. 10A and 10B are schematic views each showing a modified structureof the polarizing element of the second embodiment;

FIG. 11 is a view showing an example (1) of an emission-surfacestray-light countermeasure of the polarizing element having thestructure shown in FIGS. 10A and 10B;

FIG. 12 is a view showing an example (2) of the emission-surfacestray-light countermeasure of the polarizing element having thestructure shown in FIGS. 10A and 10B;

FIG. 13 is a cross-sectional view showing the structure of an opticalengine portion of a liquid crystal projector of an embodiment;

FIG. 14A is a schematic view illustrating a method for performingoblique sputtering deposition of Ge on a stationary substrate;

FIG. 14B is a graph showing measurement results of optical constants ofa Ge film formed by the method shown in FIG. 14A;

FIG. 15A is a schematic view illustrating a method for performingsputtering deposition of Ge (incident in a vertical direction) on arotating substrate;

FIG. 15B is a graph showing measurement results of optical constants ofa Ge film formed by the method shown in FIG. 15A;

FIGS. 16A and 16B are graphs each showing measurement results of opticalconstants of a Si film obtained by sputtering deposition;

FIG. 17 is a graph showing polarization transmission properties of a Gefilm having an optical anisotropy;

FIGS. 18A and 18B are schematic views each showing a sample structure ofExample 2;

FIG. 19 is a graph showing results of optical properties of Example 2;

FIG. 20 is a graph showing results of optical properties of Example 3;

FIG. 21 is a graph showing optical constants of an inorganic particlelayer composed of Ag and having an optical anisotropy;

FIG. 22 is a graph showing polarization transmission properties of apolarizing element having the inorganic particle layers shown in FIG.21;

FIGS. 23A and 23B are photographs each showing a surface texture of aninorganic particle layer on a flat plate;

FIG. 24 is a graph showing polarization properties of a polarizingelement sample having the structure shown in FIG. 3C;

FIG. 25 is a view of element distribution mapping of a cross-section ofthe polarizing element sample having the structure shown in FIG. 3C;

FIGS. 26A and 26B are schematic views each showing an observation resultof an inorganic particle layer of the polarizing element sample havingthe structure shown in FIG. 3C;

FIG. 27 is an electron beam diffraction image of the inorganic particlelayer of the polarizing element sample having the structure shown inFIG. 3C;

FIG. 28 is a graph showing polarization properties of a polarizingelement sample having the structure shown in FIGS. 5A and 5B;

FIG. 29 is a graph showing transmission contrast of the polarizingelement sample having the structure shown in FIGS. 5A and 5B;

FIGS. 30A and 30B are schematic views each showing an observation resultof an inorganic particle layer of the polarizing element sample havingthe structure shown in FIGS. 5A and 5B;

FIG. 31 is a SEM image of the polarizing element sample having thestructure shown in FIGS. 5A and 5B, when viewed in plan;

FIGS. 32A and 32B are schematic views each showing the relationshipbetween the major axis and the thickness of an inorganic particleobtained by oblique sputtering deposition;

FIG. 33 is a view showing preconditions of a polarizing element in anoptical property simulation;

FIGS. 34A to 34C are graphs each showing optical properties of apolarizing element when a material for an inorganic particle layer is Geparticles or a Ge thin film;

FIGS. 35A and 35B are graphs each showing an aspect ratio distributionof Ge particles, which is obtained when oblique sputtering deposition isperformed on a flat plate by changing a substrate inclined angle θ;

FIG. 36 is a graph showing polarization properties of a polarizingelement sample having the structure shown in FIG. 3C;

FIGS. 37A to 37C are views each illustrating an oblique sputteringmethod of Example 7;

FIG. 38 is a graph showing polarization properties of a Ge particlelayer sample of Example 7;

FIG. 39 is a graph showing the relationship between the contrast and analuminum height as a reflection layer of the polarizing element havingthe structure shown in FIGS. 5A and 5B;

FIG. 40 is a graph showing polarization properties of a polarizingelement sample of Example 8;

FIG. 41 is a view showing irregularities of a texture structure formedby a rubbing treatment;

FIG. 42 is a graph showing transmittance properties of a substratebefore and after a rubbing treatment;

FIG. 43 is a view showing a surface texture of a Ge particle film(antireflection film) provided on a substrate processed by a rubbingtreatment;

FIG. 44 is a graph showing improvement in polarization properties of anantireflection film by a rubbing treatment;

FIG. 45 is a graph showing polarization properties of a sample of aninorganic particle layer made of Si of Example 10; and

FIG. 46 is a graph showing polarization properties of a sample of aninorganic particle layer made of Sn of Example 10.

FIG. 47 is a view showing an alternate example (1) of anemission-surface stray-light countermeasure of the polarizing elementshown in FIGS. 5A and 5B;

DETAILED DESCRIPTION

The present application will be described below in greater detail withreference to the drawings according to an embodiment.

A polarizing element of an embodiment according comprises: a substratetransparent to visible light; and linear inorganic particle layers inwhich inorganic particles are continuously disposed on the substrate,the inorganic particle layers being disposed on the substrate atpredetermined intervals to form a one-dimensional lattice wire gridstructure, wherein the inorganic particles each have an elliptical shapehaving a major axis in the disposed direction and a minor axis in adirection perpendicular thereto. In addition, as an optical constant ofthe inorganic particle layers, an optical constant of the inorganicparticles in the disposed direction is larger than that of the inorganicparticles in the direction perpendicular thereto. In particular, therefractive index of the inorganic particles in the disposed direction islarger than that of the inorganic particles in the directionperpendicular thereto, and the extinction coefficient of the inorganicparticles in the disposed direction is larger than that of the inorganicparticles in the direction perpendicular thereto.

In the polarizing element of this embodiment, convex portions, which areformed of a material transparent to visible light and which extend inone direction parallel with a primary surface of the substrate, areprovided on the substrate at predetermined intervals, and the inorganicparticle layers are each formed on a top part or at least one ofsidewall parts of each of the convex portions.

FIGS. 1A and 1B each show a structural example of the polarizing elementof the first embodiment. FIG. 1A is a cross-sectional view of apolarizing element 10, and FIG. 1B is a plan view of the polarizingelement 10.

As shown in FIGS. 1A and 1B, in the polarizing element 10, inorganicparticle layers 15 are selectively formed on one-side surface parts ofconvex portions 14a provided on the surface of a substrate 11 which istransparent to visible light, so that a wire grid structure is formed ofthe inorganic particle layers 15 which are disposed on the substrate 11at predetermined intervals.

The substrate 11 is formed of a material, such as glass, sapphire, orquartz, having a refractive index of 1.1 to 2.2 and being transparent tolight (visible light region in this embodiment) in a service bandwidth.In this embodiment, glass, in particular, quartz (refractive index:1.46) or soda-lime glass (refractive index: 1.51), is preferably used. Acomponent composition of the glass material is not particularly limited,and for example, an inexpensive glass material, such as silicate glasswhich is widely used as an optical glass, may be used, so thatmanufacturing cost can be reduced. In addition, as the substrate 11, aquartz substrate or a sapphire substrate, having high thermalconductivity, is advantageously used in a polarizing element for anoptical engine of a projector generating a large amount of heat.

A concave-convex member 14 is formed of the convex portions 14a having arectangular cross-sectional shape, which are periodically provided onthe primary surface of the substrate 11 to extend in one direction(absorption-axis Y direction) parallel with the primary surface of thesubstrate 11 at a predetermined pitch, which is smaller than awavelength in a visible light region, in a direction (transmission-axisX direction) perpendicular to the absorption-axis Y direction of thesubstrate 11. In addition, the concave-convex member 14 is provided sothat the inorganic particle layers 15 are to be formed thereon, and thewire grid structure of the inorganic particle layers is determined bythe machined size and the pattern shape of the concave-convex member 14;hence, the concave-convex member 14 is important to obtain predeterminedpolarization properties of the polarizing element 10. That is, themachined size and the pattern shape of the concave-convex member 14 areappropriately determined in accordance with targeted polarizationproperties (extinction ratio) and/or an intended visible lightwavelength region. In particular, in FIG. 2, the pitch (in the Xdirection) between grooves of the concave-convex member 14 is 0.5 μm orless, the line width (width of the convex portion 14a) of theconcave-convex member 14 is 0.25 μm or less, and the depth of theconcave-convex member 14 is 1 nm or more.

In addition, the pitch, line width/pitch, concave portion depth (convexportion height), convex portion length, and top line width/bottom linewidth of the concave-convex member 14 are preferably set in thefollowing ranges.

0.05 μm<pitch<0.8 μm

0.1<line width/pitch<0.9

0.01 μm<concave portion depth<0.2 μm

0.05 μm<convex portion length

1.0≥(top line width/bottom line width)

The concave-convex member 14 may be directly formed in the substrate 11or may be separately formed. As a method for forming the concave-convexmember 14, for example, there may be mentioned a lapping method using apolishing sheet; a method in which after a photoresist, which is used insemiconductor device manufacturing or the like, is applied on asubstrate and is then patterned by exposure using a mask, the substrateis etched using the photoresist thus patterned as a mask; and a methodin which by using a mold which is formed in accordance with dimensionsof the concave-convex member 14, a mold shape is transferred on asubstrate (nanoinprinting method), and an appropriate method may beselected among the above methods.

The convex portion 14a of the concave-convex member 14 may have aquadrangular, a trapezoidal, a sawtooth, or a triangular shape. FIG. 3Ashows one example in which the convex portion 14a of the concave-convexmember 14 has a rectangular cross-sectional shape, and the inorganicparticle later 15 is formed on one side surface of the convex portion14a. In addition, FIG. 3B shows one example in which a convex portion16a of a concave-convex member 16 has a sawtooth cross-sectional shape,and the inorganic particle later 15 is formed on one side surface of theconvex portion 16a, which is provided perpendicular to the surface ofthe substrate 11. Since the convex portion 16a is formed to have asawtooth shaped cross-section, adhesion of a film on the top part of theconvex portion 16a can be avoided. In addition, FIG. 3C shows oneexample in which a convex portion 17a of a concave-convex member 17 hasa triangular cross-sectional shape, and the inorganic particle later 15is formed on one side surface of the convex portion 17a.

Since the inorganic particle layers 15 are each formed on the top partor at least one of the sidewall parts of each of the convex portions14a, the inorganic particle layers 15, which are made of inorganicparticles having shape anisotropic properties, each having a desiredfine shape, can be disposed to form a stripe pattern on the surface ofthe substrate 11 and can be isolated from each other. In addition, sincethe concave-convex member 14 is mechanically formed, and the inorganicparticle layers 15 are formed thereon, the concave-convex member 14 canbe stably formed, and in addition, the shapes of the inorganic particlelayers formed thereon can be easily controlled.

Since the inorganic particle layer 15 is formed by adhering inorganicparticles to the top part or at least one sidewall part of the convexportion 14a, the inorganic particles are linearly disposed in onedirection (absorption-axis Y direction) parallel with the primarysurface of the substrate 11. “The inorganic particles are linearlydisposed” indicates the state in which inorganic particles are connectedto each other to form a strip-shaped continuous film or the state inwhich inorganic particles aggregate to form independent islands eachhaving an appropriate size, and the islands are aligned in one directionto form a discontinuous film. As long as grain boundaries are formed,either one of the states described above may be used. In addition, sincethe inorganic particle layers 15 are formed on the convex portions 14aregularly provided at predetermined intervals, the inorganic particlelayers 15 form a stripe pattern (one-dimensional lattice pattern), sothat a wire grid structure is obtained.

In this embodiment, the inorganic particle has an elliptical shapehaving a major axis in the disposed direction and a minor axis in adirection perpendicular thereto. In addition, it is preferable that theinorganic particles have a size smaller than the wavelength in a servicebandwidth and be completely isolated from each other.

In addition, as the optical constant of the inorganic particle layer 15of this embodiment according to the present invention, it is importantthat the optical constant in the absorption-axis Y direction (disposeddirection of the inorganic particles) be larger than that in thetransmission-axis X direction (direction perpendicular to the disposeddirection of the inorganic particles). In particular, the refractiveindex of the inorganic particle layer 15 in the absorption-axis Ydirection is larger than that in the transmission-axis X direction, andthe extinction coefficient of the inorganic particle layer 15 in theabsorption-axis Y direction is larger than that in the transmission-axisX direction. In order to obtain the above properties, the inorganicparticle layers 15 are formed by an oblique sputtering method.

The oblique sputtering deposition in order to form the inorganicparticle layers 15 of this embodiment according to the present inventionis shown in FIG. 4. In this figure, although ion beam sputtering isshown by way of example, the oblique sputtering deposition is notlimited thereto, and any sputtering method may also be used.

In FIG. 4, reference numeral 1 indicates a stage supporting thesubstrate 11, reference numeral 2 indicates a target, reference numeral3 indicates a beam source (ion source), and reference numeral 4indicates a control plate. The stage 1 is inclined by a predeterminedangle θ with respect to a normal line direction of the target 2, and thesubstrate 11 is disposed so that the longitudinal direction of theconvex portions 14a of the concave-convex member 14 is perpendicular toan incident direction of inorganic particles emitted from the target 2.The angle θ is set, for example, in the range of 0° to 15°. Ions emittedfrom the beam source 3 irradiate the target 2. Inorganic particleskicked out of the target 2 by the irradiation of ion beams are incidenton the surface of the substrate 11 in an oblique direction and adherethereto. In this step, when the flat control plate 4 is disposed overthe substrate 11 with a predetermined distance therebetween (such as 50mm), the direction of particles incident on the substrate 11 can becontrolled, so that particles can be deposited only on the sidewallparts of the convex portions 14a. In this case, the thickness of theinorganic particle layer 15 is preferably 200 nm or less.

As described above, when the incident direction of inorganic particlesis controlled by inclining the substrate 11 with respect to the target 2in deposition by a sputtering method, the inorganic particle layers 15each selectively formed on the top part or at least one of sidewallparts of each of the convex portions 14a are obtained. In each of theinorganic particle layers 15, the inorganic particles are linearlydisposed which have an elliptical shape having a major axis in thedisposed direction and a minor axis in the direction perpendicularthereto, and in which the optical constant of the inorganic particlelayer 15 in the absorption-axis Y direction is larger than that in thetransmission-axis X direction.

In this embodiment, as a material (material forming inorganic particles)for the inorganic particle layer 15, a material appropriate as thepolarizing element 10 is preferably to be selected in accordance with aservice bandwidth. That is, a metal material and a semiconductormaterial are suitably used as the above material, and in particular, asthe metal material, for example, there may be mentioned Al, Ag, Cu, Au,Mo, Cr, Ti, W, Ni, Fe, Si, Ge, Te, Sn, or an alloy thereof. In addition,as the semiconductor material, for example, Si, Ge, Te, or ZnO may bementioned. Furthermore, a silicide material, such as FeSi (inparticular, β-FeSi2), MgSi2, NiSi2, BaSi2, CrSi2, or CoSi2, may also bepreferably used.

In addition, when a semiconductor material is used for the inorganicparticle layer 15, the absorption function relates to bandgap energy ofthe semiconductor. The reason for this is that light having energy equalto or less than the bandgap energy is absorbed. Hence, when asemiconductor material is used for a visible light polarizing element,the bandgap energy is necessary to be equal to or less than that of aservice bandwidth. For example, in the case in which visible light isused, for absorption at a wavelength of 400 nm or more, a materialhaving a bandgap energy of 3.1 eV or less is necessarily used. Thebandgap energy also depends on the size of particles as described in OYOBUTURI, Vol. 73, No. 7, 2004, pp. 917 to 923, and in particular, whenthe size is decreased to several nanometers, the bandgap energy tends torapidly increase; hence, in consideration of the size effect asdescribed above, the material and the thickness thereof are to beappropriately determined. From the point as described above, asemiconductor material having a small bandgap energy in the bulk stateis preferable, and for example, Ge is a preferable material for avisible light polarizing element since having a small bandgap energy of0.67 eV (wavelength of approximately 1.85 μm) in the bulk state.

By the structure as described above, the polarizing element 10 has adesired extinction ratio in a visible light region and also has superiordurability to that of a related polarizing element.

In addition, if desired, when the front and the rear surfaces of thesubstrate are coated with antireflection films, reflection at theinterface between air and the substrate is prevented, and as a result,the transmission-axis transmittance can be improved. As theantireflection film, for example, there may be used a lowrefractive-index film of MgF2 or the like, which is generally used, or amultilayer film composed of a low refractive-index film and a highrefractive-index film. In addition, after the structure shown in FIGS.1A and 1B is formed, when a material, such as SiO2, transparent in aservice bandwidth region is applied on surfaces of the above structureas a protective film so that the thickness thereof has no influences onthe polarization properties, it is preferable since the reliability,such as humidity resistance, is effectively improved. However, since theoptical properties of inorganic particles are influenced by therefractive index of the surrounding material, the polarizationproperties may be changed in some cases when the protective film isformed. In addition, since the reflectance to incident light is alsochanged by the optical thickness (refractive index×thickness ofprotective film) of the protective film, a protective film material andthe thickness thereof are to be determined in consideration of the aboveinfluences. As the protective film material, a material having arefractive index of 2 or less and an extinction coefficient ofapproximately zero is preferable. As the material described above, SiO2and Al2O3 may be mentioned by way of example. The materials mentionedabove may be formed into films, for example, by a general vacuum filmformation method (such as a chemical vapor deposition method, asputtering method, or an evaporation method), or a spin coating methodor a dipping method, which uses a sol in which the above material isdispersed in a liquid. Furthermore, a self-organizing film as disclosedin J. Microelectromechanical Systems Vol. 10, No. 1, 2001, pp. 33 to 40may also be used. In order to improve humidity resistance, a hydrophobicself-organizing film is preferable. Perfluorodecyltrichlorosilane (FDTS)and Octadecanetrichlorosilane (OTS) may be mentioned by way of example.Since having hydrophobic properties, the above materials are alsoeffective in terms of anti-fouling. The materials mentioned above arecommercially available from chemical drug producers, such as GelestInc., USA, and film formation can be performed by dipping. In addition,the film formation may also be performed by vapor phase growth, and anexclusive machine therefor is sold by 65 Applied Microstructure Inc.,USA. In the case of a silane-based self-organizing film as describedabove, in order to improve the adhesion, after SiO2 is applied on thepolarizing element by the method described above to form an adhesivelayer, the self-organizing film may be deposited.

Next, the structure of a polarizing element of a second embodiment.

In this embodiment, reflection layers in the form of strip-shaped thinfilms, which are made of a metal, which extend in one direction parallelwith a primary surface of a substrate, and which are provided thereonwith predetermined intervals, and dielectric layers formed on thereflection layers are provided, and the inorganic particle layers areformed on the dielectric layers at positions corresponding to those ofthe strip-shaped thin films.

FIGS. 5A and 5B are schematic views each showing a structural example ofthe polarizing element of the second embodiment according to the presentinvention. FIG. 5A is a cross-sectional view of a polarizing element 20,and FIG. 5B is a plan view of the polarizing element 20.

As shown in FIGS. 5A and 5B, inorganic particle layers 25 areselectively formed on laminate structures composed of dielectric layers23 and thin films 22a forming reflection layers 22 provided on a surfaceof a substrate 21 which is transparent to visible light, and hence awire grid structure is formed in which the inorganic particle layers 25are disposed on the substrate 21 with predetermined intervals.

In this embodiment, the substrate 21 is formed from the same material asthat for the substrate 11 of the first embodiment.

As the reflection layers 22, the strip-shaped thin films 22a, which aremade of a metal and which extend in one direction (absorption-axis Ydirection) parallel with the primary surface of the substrate 21, areprovided thereon. As a material for the reflection layer 22, variousmaterials may be used. For example, a metal, such as Al, Ag, Cu, Mo, Cr,Ti, Ni, W, Fe, Si, Ge, or Te, or a semiconductor material may be used.In addition, besides the metal materials, for example, an inorganic filmor a resin film, which has a high surface reflectance by coloring or thelike, may also be used.

The thin films 22a are disposed on the surface of the substrate 21 witha pitch smaller than the wavelength of a visible light region and areformed (metal lattice), for example, by patterning of the above metalfilm using a photolithographic technique. The reflection layers 22 havea function as a wire grid type polarizer, and among various types oflight incident on the surface of the substrate 21, a polarized wave (TEwave (S wave)) having an electric field component in a direction (Y-axisdirection) parallel with the longitudinal direction of the wire grid isattenuated, and a polarized wave (TM wave (P wave)) having an electricfield component in a direction (X-axis direction) perpendicular to thelongitudinal direction of the wire grid is allowed to pass.

In addition, the pitch, line width/pitch, thin film height (thickness,lattice depth), and thin film length (lattice length) of the reflectionlayer 22 (thin film 22a) are preferably set in the following ranges.

0.05 μm<pitch<0.8 μm

0.1<line width/pitch<0.9

0.01 μm<thin film height<1 μm

0.05 μm<thin film length

The dielectric layers 23 are formed on the surface of the substrate 21from an optical material, such as SiO2, transparent to visible light bya general vacuum film formation method, such as a sputtering method, avapor phase growth method, or an evaporation method, or a sol-gel method(method for applying a sol by a spin coating method or the like,followed by thermal-curing to form a gel). The dielectric layer 23 isformed as an underlayer for the inorganic particle layer 25 and is alsoformed to have a thickness so as to shift the phase of a polarized lightpassing through the inorganic particle layer 25 and reflected by thereflection layer 22 by a half wavelength with respect to a polarizedlight reflected by the inorganic particle layer 25, which will bedescribed later. In particular, the thickness may be appropriately setin the range of 1 to 500 nm. The dielectric layer 23 is preferablyformed to enhance an interference effect by adjusting the phase of thepolarized light and to have a thickness shifting the phase by a halfwavelength. However, since the reflected light can be absorbed by theinorganic particle layer, which has an absorption effect, andimprovement in contrast can be realized even if the film thickness isnot optimized, the film thickness may be practically determined inconsideration of desired polarization properties in combination with anactual manufacturing process. A practical film thickness is in the rangeof 1 to 500 nm.

As a material forming the dielectric layer 23, a general material, suchas SiO2, Al2O3, or MgF2, may be used. These materials mentioned abovemay be formed into a thin film by a general vacuum film formationmethod, such as a sputtering method, a vapor phase growth method, or anevaporation method, or a method in which a sol material is applied on asubstrate, followed by thermal-curing. In addition, the refractive indexof the dielectric layer 23 is preferably set in the 25 range of morethan 1 to 2.5. Since the optical properties of the inorganic particlelayer 25 are influenced by the refractive index of the surroundingmaterial, polarizing element properties can also be controlled by thedielectric layer material.

The inorganic particle layer 25 is formed by adhering inorganicparticles to the dielectric layer 23 at a position corresponding to thatof the thin film 22a so that the inorganic particles are linearlydisposed in one direction (absorption-axis Y direction) parallel withthe primary surface of the substrate 21. In addition, since theinorganic particle layers 25 are formed above the respective thin films22a regularly provided with predetermined intervals, the inorganicparticle layers 25 form a stripe pattern, and hence the wire gridstructure is formed.

In FIGS. 5A and 5B, the inorganic particle layer 25 has the structure inwhich island-shaped inorganic particles 25a having a prolate ellipsoidshape are disposed so that the long axis direction thereof is parallelwith the longitudinal direction (Y-axis direction) of the thin film 22aand so that the short axis direction is in a direction (X-axisdirection) perpendicular thereto. In addition, it is preferable that theinorganic particles 25a have a size smaller than the wavelength in aservice bandwidth and be completely isolated from each other.

As the optical constant of the inorganic particle layer 25 of thisembodiment according to the present invention, the optical constant inthe absorption-axis Y direction (disposed direction of the inorganicparticles) is larger than that in the transmission-axis X direction(direction perpendicularly to the disposed direction of the inorganicparticles). In particular, the refractive index of the inorganicparticle layer 25 in the absorption-axis Y direction is larger than thatin the transmission-axis X direction, and the extinction coefficient inthe absorption-axis Y direction is larger than that in thetransmission-axis X direction. In order to obtain the propertiesdescribed above, the inorganic particle layers 25 are formed by anoblique sputtering method. The details of the oblique sputtering methodare the same as those of the method shown in the first embodiment. Inaddition, a material for the inorganic particle layer 25 is the same asthat for the inorganic particle layer 15 of the first embodiment.

In the polarizing element 20 thus formed of this embodiment, the frontsurface of the substrate 21, that is, the surface on which thestrip-shaped thin films 22a, the dielectric layers 23, and the inorganicparticle layers 25 are formed is used as a light incident surface. Inaddition, by using the following four functions, that is, the lighttransmission, reflection, interference, and selective light absorptionof a polarized wave by optical anisotropic properties, the polarizingelement 20 attenuates a polarized wave (TE wave (S wave)) having anelectric field component (Y-axis direction) parallel with a wire gridlongitudinal direction of the reflection layer 22 and transmits apolarized wave (TM wave (P wave)) having an electric field component(X-axis direction) perpendicular to the wire grid longitudinaldirection.

That is, as shown in FIG. 6A, the TE wave is attenuated by the selectivelight absorption function, which is for a polarized wave, of the opticalanisotropic properties of the inorganic particle layer 25 formed of theinorganic particles 25a having shape anisotropic properties. The thinfilms 22a function as a wire grid and each reflect a TE wave passingthrough the inorganic particle layer 25 and the dielectric layer 23, asshown in FIG. 6B. In this step, when the dielectric layer 23 is formedso that the phase of the TE wave passing through the inorganic particlelayer 25 and reflected by the thin film 22a is shifted by a halfwavelength, the TE wave reflected by the thin film 22a and a TE wavereflected by the inorganic particle layer 25 cancel each other by theinterference and are attenuated. As described above, the selectiveattenuation of the TE wave can be performed. A thickness to shift thephase by a half wavelength is preferable; however, since the inorganicparticle layer itself has an absorption effect, improvement in contrastcan be realized even if the thickness of the dielectric layer is notoptimized, and hence the thickness may be practically determined inconsideration of desired polarization properties together witheconomical efficiency in the actual manufacturing process. reflectionlayer side. Also in this case, by the selective absorption effect of theinorganic particle layer, a transmission contrast equivalent to thatdescribed above can be obtained. As described later, the reason for thisis that the intensity of the transmission contrast depends on thethickness of the reflection layer. In the case in which the above methodis actually used, for example, in an optical engine portion (FIG. 13) ofa liquid crystal projector of an embodiment according to the presentinvention, when a polarizing plate of the embodiment according to thepresent invention is used as an incident polarizing plate 10A in orderto avoid undesirable reflected light to a liquid crystal panel, asurface (the inorganic particle layer 25 side in FIGS. 6A and 6B) of thepolarizing plate is disposed to face the liquid crystal panel side. Bythe configuration as described above, undesired reflected light returnsto a light source side. When the polarizing plate of this embodimentaccording to the present invention is also used as an emissionpolarizing plate 10B or 10C, the surface (the inorganic particle layer25 side in FIGS. 6A and 6B) of this polarizing plate may be disposed toface the liquid crystal panel side. The direction of light incident onthe polarizing plate is reversed between the use as an incidentpolarizing plate and the use as an emission polarizing plate; however,regardless of the direction of light incident on the polarizing plate,equivalent transmission contrast is obtained as described above, andhence practical problems may not occur.

The polarizing element 20 may be formed, for example, as describedbelow. That is, after a metal film and a dielectric film are formed onthe substrate 21, and a lattice pattern is formed by patterning themetal film and the dielectric film using a photolithographic techniqueor the like, the inorganic particle layers 25 are formed by an obliquesputtering deposition method. By adjusting an incident angle in theoblique sputtering deposition, particles can be intensively deposited inthe vicinities of top parts of convex portions formed of thestrip-shaped thin films 22a and the dielectric layers 23.

Besides the above method, a method may also be used in which aone-dimensional lattice pattern is formed on a transparent substrateusing a transparent material, and metal layers, dielectric layers, andinorganic particle layers are sequentially formed on top parts of convexportions of this lattice pattern by oblique deposition. Furthermore,another method may also be used in which after a metal film, adielectric film, and an inorganic particle film are sequentially formedon a substrate, these layers are simultaneously etched to form aone-dimensional lattice pattern.

Furthermore, as shown in FIG. 7, after the reflection layers 22 areformed on the substrate 21 to have a one-dimensional lattice pattern,the dielectric layer 23 is formed all over the substrate 21. Hence, thedielectric layer 23 has a concave-convex shape having convex portionsover the strip-shaped thin films 22a and concave portions therebetween.Subsequently, by an oblique sputtering deposition method, the inorganicparticle layers 25 are formed on side surfaces of top parts of theconvex portions of the dielectric layer 23, so that a polarizing elementhaving the same effect as that of the example shown in FIGS. 5A and 5Bcan be formed. The area on which the inorganic particle layer 25 isformed is not limited to one side surface of the top part of thedielectric layer 23 as shown in the figure and may be formed on bothside surfaces of the top part.

In addition, as the polarizing element of this embodiment according tothe present invention, a polarizing element having the structure inwhich the dielectric layers 23 shown in FIGS. 5A and 5B are omitted mayalso be used. That is, when the inorganic particle layers 25 areselectively formed on the thin films 22a forming the reflection layers22 provided on the surface of the substrate which is transparent tovisible light, a wire grid structure is obtained in which the inorganicparticle layers 25 are disposed on the substrate 21 with predeterminedintervals. Even by the structure described above, a desired extinctionratio (contrast: transmission-axis transmittance/absorption-axistransmittance) can be obtained in a visible light region.

Next, as an emission-surface stray-light countermeasure (ghostcountermeasure) for a liquid crystal projector, an example in whichselective light absorption layers are provided on a rear surface side ofthe polarizing element 20 will be described.

FIG. 8 is a side cross-sectional view showing a schematic structure of apolarizing element 20A. In this figure, the same constituent elements asthose of the above polarizing element 20 are designated by the samereference numerals, and a detailed description thereof is omitted.

In the polarizing element 20A of this embodiment, the reflection layers22 having a one-dimensional lattice pattern are formed on a surface (onesurface) of the substrate 21, and on the reflection layers 22, thedielectric layers 23 and the inorganic particle layers 25 aresequentially formed. In addition, on the rear surface (opposite sidesurface) of the substrate 21, selective light absorption layers 28having optical anisotropic properties for a polarized wave are provided,each of which is composed of a convex portion 26 of a dielectricmaterial and a second inorganic particle layer 27 formed on a top partor at least one of side surface parts of this convex portion 26.

In the polarizing element 20 which is not provided with the selectivelight absorption layers 28 having optical anisotropic properties for apolarized wave, since the rear surface of the substrate 21 has a mirrorsurface, return light, which passes through the polarizing element andis reflected by another optical element, such as a lens, disposedfollowing the polarizing element, is again reflected by the above mirrorsurface. The stray light as described above causes degradation in imagequality, such as ghost, in a liquid crystal projector.

In this embodiment, when the selective light absorption layers 28 havingoptical anisotropic properties for a polarized wave, having the abovestructure, are provided at the rear surface side of the substrate 21,the above stray light is absorbed, and reflection by the reflectionlayers 22 is prevented. The convex portions 26 forming the selectivelight absorption layers 28 having optical anisotropic properties for apolarized wave are formed from the same material as that for thedielectric layer 23 and are also formed into a one-dimensional latticepattern extending in the same direction as that of the strip-shaped thinfilms 22a of the reflection layers 22. The second inorganic particlelayer 27 is formed of inorganic particles linearly disposed on the toppart or the side surface part of the convex portion 26 and is formedfrom a material similar to that for the inorganic particle layer 25provided at the front surface side of the substrate 21, and hence theselective light absorption effect for incident light from the rearsurface of the substrate 21 can be obtained.

As a method for forming the convex portions 26, as is the method forforming the dielectric layers 23, a sputtering method, a sol-gel method,or the like may be used. The formation of the convex shape is preferablyformed by pattern processing using a photolithographic technique orpress formation by a nanoinprinting method. As a method for forming thesecond inorganic particle layers 27, oblique deposition similar to thatfor the inorganic particle layers 25 provided at the front surface sideof the substrate 21 is preferable. The second inorganic particle layer27 is formed on the top part, one side surface part, or two sidesurfaces of the convex portion 26.

Alternatively, as another method for manufacturing the polarizingelement 20A, by using the polarizing element 10 shown in FIGS. 1A and 1Band the polarizing element 20 shown in FIGS. 5A and 5B, the rearsurfaces of the substrates 11 and 21 may be adhered to each other with atransparent adhesive to form the polarizing element 20A as shown in FIG.47. In this case, the inorganic particles of the inorganic particlelayers 15 and those of the inorganic particle layers 25 are preferablydisposed in the same direction.

Next, as another ghost countermeasure for a liquid crystal projector, anexample in which an antireflection layer is provided between thesubstrate 21 and the reflection layer 22 will be described.

FIG. 9 is a side cross-sectional view showing a schematic structure of apolarizing element 20B. In this figure, the same constituent elements asthose of the above polarizing element 20 are designated by the samereference numerals, and a detailed description thereof is omitted.

The polarizing element 20B of this embodiment is formed for a purposesimilar to that for the above polarizing element 20A. That is, in thepolarizing element 20B of this embodiment, antireflection layers 29 areprovided between the substrate 21 and the reflection layers 22. By theantireflection layers 29 provided under the reflection layers 22 havinga one-dimensional lattice pattern, reflection of incident light from therear surface of the substrate 21 is prevented.

As the antireflection layer 29, for example, a black layer, such as acarbon black layer, is preferably used. By the layer as described above,the incident light from the rear surface of the substrate 21 can beefficiently absorbed. In addition, besides carbons, an oxygen-deficientsilicon oxide layer or a low reflection-material layer having areflectance lower than that of the reflection layer 22 may also be used.Alternatively, a layer similar to the inorganic particle layer 25 may beused as the antireflection layer 29. In addition, in the example shownin the figure, in order to decrease the reflectance by obtaining aninterference effect between the reflection layer 22 and theantireflection layer 29, a dielectric layer 2a is provided. Thedielectric layers 2a and the antireflection layers 29, having a latticepattern, can be simultaneously obtained when the reflection layers 22are formed by patterning.

In addition, as another ghost countermeasure for a liquid crystalprojector, the following method may also be used. That is, a rubbingtreatment is performed on the surface of the substrate 21 so as to forma texture structure of irregularities in which fine streaks are alignedin one direction in accordance with the disposed direction of theinorganic particles 25a of the inorganic particle layers 25 which aresubsequently formed on the above surface, and thin films (antireflectionlayers) of inorganic particles having shape anisotropic properties maythen be formed by the above-described oblique sputtering method on thesurface processed by the rubbing treatment in accordance with thedisposed direction of the inorganic particles 25a. By the texturestructure described above, the alignment properties of the inorganicparticles are improved so that the long axis directions thereof arealong the longitudinal directions of the fine streaks, and thepolarization properties of the thin film are improved, so that the ghostcountermeasure effect can be enhanced. In addition, an increase intransmission contrast properties as the polarizing element can also beexpected.

As one variation of the second embodiment, at least one laminatestructure of the dielectric layer 23 and the inorganic particle layer 25may be further provided on the inorganic particle layer 25 to form amultilayer structure. An example of this multilayer structure is shownin FIGS. 10A and 10B.

In a polarizing element 30 shown in FIGS. 10A and 10B, the strip-shapedthin film 22a forming the reflection layer 22, the dielectric layer 23,and the inorganic particle layer 25 are formed on the substrate 21 inthat order from the bottom, and on the above inorganic particle layer25, a laminate structure 26a of the dielectric layer 23 and theinorganic particle layer 25 is further formed, so that a wire gridstructure is formed. In addition, on a laminate structure 1a thusformed, another laminate structure 1a may be further provided.Accordingly, the transmission-axis direction contrast is increased at adesired wavelength by increasing the interference effect between thelayers, and at the same, an undesirable reflection component from apolarizing element can be decreased in a wide range in transmission typeliquid crystal display devices; hence, as a result, by a polarizingelement having a film thickness smaller than that of the polarizingelement 20 having the structure shown in FIGS. 5A and 5B, a highcontrast and a low reflection can be realized.

As a method for manufacturing the polarizing element 30 of thisembodiment, the following three methods may be mentioned by way ofexample. That is, as a first method, after a reflection layer material(metal lattice material), and a dielectric film are laminated on thesubstrate 21, and a one-dimensional lattice pattern is formed, forexample, by a nanoinprinting or a photolithographic technique usingetching or the like, particles are deposited by an oblique sputteringdeposition method. According to the above method, by adjusting anincident angle in the oblique sputtering deposition, inorganic particlescan be intensively deposited in the vicinities of top parts of convexportions of the dielectric layers 23. In addition, as a second method,after a concave-convex member having a one-dimensional lattice patternis formed on a transparent substrate using a transparent material, areflection layer material, a dielectric layer material, and an inorganicparticle material are sequentially and repeatedly deposited by obliquedeposition in accordance with the number of laminates. In addition, as athird method, a laminate structure composed of a dielectric film and aninorganic particle thin film is repeatedly formed on a thin film (metallattice film) for a reflection layer in accordance with the number oflaminates, followed by etching. The inorganic particle material may havean imperfect island shape as long as it has a grain boundary. Inaddition, the dielectric layers 23 and the inorganic particle layers 25may be formed by a method including sputtering deposition and etching incombination with a method using oblique sputtering deposition. When theabove manufacturing processes are carried out, the type of substratematerial is not particularly limited; however, when the substrate isused for a projector generating a large amount of heat, quartz orsapphire, having a high thermal conductivity, is preferably used.

Incidentally, in the polarizing element 30 having the structure asdescribed above, since the light emission surface (reflection layer 22)is formed of a metal, when light returns, the reflectance is unfavorablyincreased. Accordingly, also in this embodiment, the emission-surfacestray-light countermeasure described above is preferably used.

FIGS. 11 and 12 each show an example of an emission-surface stray-lightcountermeasure of this embodiment.

FIG. 11 shows an example in which the structure shown in FIG. 8 is usedin this embodiment.

A polarizing element 30A is formed such that in the polarizing element30, on the surface (rear surface) of the substrate 21 opposite to thaton which the reflection layers 22 are formed, there are provided theselective light absorption layers 28 having optical anisotropicproperties for a polarized wave, each of which is composed of the convexportion 26 of a dielectric material and the second inorganic particlelayer 27 formed on the top part or at least one side surface part of theconvex portion 26.

FIG. 12 shows an example in which the structure shown in FIG. 9 is usedin this embodiment.

A polarizing element 30B is formed such that in the polarizing element30, the antireflection layers 29 are provided under the reflectionlayers 22 having a one-dimensional lattice pattern, and the dielectriclayers 2a are provided between the reflection layers 22 and theantireflection layers 29 in order to obtain the interference effect. Inthis embodiment, in FIG. 12, the dielectric layer 2a under thereflection layer 22 may not be provided, and the antireflection layer 29may be directly provided under the reflection layer 22. In addition,when the antireflection layer 29 is formed from the same material asthat for the inorganic particle layer 25, improvement in contrast can beobtained; however, in order to simply prevent reflection of returnlight, as the antireflection layer 29, a layer (low reflection layer)having a reflectance lower than that of the reflection layer 22 may beprovided thereunder. As a low reflection material, any material having areflectance lower than that of the reflection layer 22 has the effect,and for example, carbon, an oxide film, such as oxygen-deficient SiO2,metal particles, or semiconductor particles may also be used.

In the case in which the antireflection layer 29 and the dielectriclayer 2a are provided under the reflection layer 22, or theantireflection layer 29 is directly formed under the reflection layer22, when these films are formed before a film for the reflection layersis formed and are simultaneously etched when the reflection layers 22are formed by etching, these layers can be formed only under thestrip-shaped thin films 22a of the reflection layers 22, and hence it ispossible not to give any influences on the transmission properties.

In addition, in the second embodiment, if desired, when the front andthe rear surfaces of the substrate are coated with antireflection films,reflection at the interface between air and the substrate is prevented,and as a result, the transmission-axis transmittance can be improved. Asthe antireflection film, for example, there may be used a lowrefractive-index film of MgF2 or the like, which is generally used, or amultilayer film composed of a low refractive-index film and a highrefractive-index film. In addition, after the structure shown in FIGS.5A and 5B or FIG. 7 is formed, when a material, such as SiO2,transparent in a service bandwidth region is applied on surfaces of theabove structure as a protective film so that the thickness thereof hasno influences on the polarization properties, it is preferable since thereliability, such as humidity resistance, is effectively improved.However, since the optical properties of inorganic particles areinfluenced by the refractive index of the surrounding material, thepolarization properties may be changed in some cases when the protectivefilm is formed. In addition, since the reflectance to incident light isalso changed by the optical thickness (refractive index×thickness ofprotective film) of the protective film, a protective film material andthe thickness thereof are to be determined in consideration of the aboveinfluences. As the protective film material, a material having arefractive index of 2 or less and an extinction coefficient ofapproximately zero is preferable. As the material described above, SiO2and Al2O3 may be mentioned by way of example. The materials mentionedabove may be formed into films, for example, by a general vacuum filmformation method (such as a chemical vapor deposition method, asputtering method, or an evaporation method), or a spin coating methodor a dipping method, which uses a sol in which the above material isdispersed in a liquid. Furthermore, a self-organizing film, as disclosedin J. Microelectromechanical Systems Vol. 10, No. 1, 2001, pp. 33 to 40,may also be used. In order to improve humidity resistance, a hydrophobicself-organizing film is preferable. Perfluorodecyltrichlorosilane (FDTS)and Octadecanetrichlorosilane (OTS) may be mentioned by way of example.Since having hydrophobic properties, the above materials are alsoeffective in terms of antifouling. The materials mentioned above arecommercially available from chemical drug producers, such as GelestInc., USA, and film formation can be performed by dipping. In addition,the film formation may also be performed by vapor phase growth, and anexclusive machine therefor is sold by Applied Microstructure Inc., USA.In the case of a silane-based self-organizing film as described above,in order to improve the adhesion, after SiO2 is applied on thepolarizing element by the method described above to form an adhesivelayer, the self-organizing film may be deposited.

Next, a liquid crystal projector of an embodiment will be described.

The liquid crystal projector of this embodiment according to the presentinvention has a lamp as a light source, a liquid crystal panel, and oneof the polarizing elements 10, 20, 20A, 20B, 30, 30A, and 30B.

FIG. 13 is a cross-sectional view showing a structural example of anoptical engine portion of a liquid crystal projector of this embodiment.

The engine portion of a liquid crystal projector 100 has an incidentside polarizing element 10A, a liquid crystal panel 50, an emissionpre-polarizing element 10B, and an emission main polarizing element 10Cfor red color LR; an incident side polarizing element 10A, a liquidcrystal panel 50, an emission pre-polarizing element 10B, and anemission main polarizing element 10C for green color LG; an incidentside polarizing element 10A, a liquid crystal panel 50, an emissionpre-polarizing element 10B, and an emission main polarizing element 10Cfor blue color LB; and a cross dichroic prism which synthesizes thethree types of light emitted from the individual emission mainpolarizing elements 10C and which emits the synthesized light to aprojector lens. The polarizing elements 10, 20, and 30 of theembodiments are used as the incident side polarizing element 10A, theemission pre-polarizing element 10B, and the emission main polarizingelement 10C, respectively.

In the liquid crystal projector 100 of this embodiment, after lightemitted from a light source lamp (not shown) is separated into the redlight LR, the green light LG, and the blue light LB by a dichroic mirror(not shown), these three types of light are injected into the respectiveincident side polarizing elements 10A, are then polarized thereby, andare further spatial-modulated by the respective liquid crystal panels50, and these three types of light thus processed are then emittedtherefrom. Subsequently, the red light LR, the green light LG, and theblue light LB thus emitted pass through the respective emissionpre-polarizing elements 10B and emission main polarizing elements 10C,are then synthesized in the cross dichroic prism 60, and aresubsequently emitted from the projector lens (not shown). Even when thelight source lamp is a high power type, since the polarizing elements10, 20, and 30 of the embodiments have superior light resistance againstintense light, a highly reliable liquid crystal projector can berealized.

In addition, the polarizing elements of the embodiments are not limitedto application for the liquid crystal projector and are preferably usedas a polarizing element to be used in high temperature environments. Forexample, the polarizing elements of the embodiments according to thepresent invention may be used as a polarizing element for car navigationsystems and/or liquid crystal displays.

EXAMPLES

Hereinafter, the verification results of polarization properties of thepolarizing element of the embodiment will be described.

Example 1

First, the optical properties of inorganic particle layers formed by theoblique sputtering deposition shown in FIG. 4 were verified.

In FIGS. 14A and 14B, experimental results of an optical anisotropyenhancement effect by the oblique ion beam sputtering are shown. Asshown in FIG. 14A, by an ion beam sputtering method, Ge particles weresputtered in a 10° direction with respect to the surface of a stationaryglass substrate 41 and deposited thereon, so that a Ge particle film 44was formed. In FIG. 14B, measurement results of optical constants(refractive index and extinction coefficient) of the Ge particle film 44thus formed are shown. The measurement was performed using a spectralellipsometer. The thickness for this measurement was 10 nm. In thisexperiment, since optical anisotropic properties were generated, thein-plane optical constants were different; that is, refractive indexes nin different directions were different from each other, and extinctioncoefficients k in different directions were also different from eachother. In addition, for comparison purposes, when Ge particles weredeposited on the substrate 41 in a direction perpendicular thereto whilethe substrate 41 is rotated, as shown in FIG. 15A, as the opticalconstants of the Ge particle film 44 thus obtained, the refractive indexn and the extinction coefficient k both showed no optical anisotropicproperties, as shown in FIG. 15B, and the individual optical constantswere close to literature values.

In addition, after the composition of the target 2 was changed from Geto Si, a Si particle film was formed on the glass substrate 41 under thesame conditions as those in the case of the Ge sputtering deposition,and the optical constants were measured. The results are shown in FIGS.16A and 16B.

Also in the case of Si, when sputtering deposition was performed in a10° direction with respect to the surface of the glass substrate 41(FIG. 16A), since optical anisotropic properties were generated, it wasfound that in-plane optical constants in different directions weredifferent from each other; that is, the refractive indexes n indifferent directions were different from each other, and the extinctioncoefficients k in different directions were also different from eachother. In addition, when sputtering deposition was performedperpendicular to the substrate 41 while the substrate 41 was rotated(FIG. 16B), optical anisotropic properties of the optical constants,that is, of the refractive index n and the extinction coefficient k,were not generated.

Next, the polarization transmittance was obtained by simulationcalculation in the case in which the Ge particle film 44 was formed tohave a thickness of 20 nm on the glass substrate 41 under the conditionsshown in FIG. 14A. The results are shown in FIG. 17. In this case, thepolarization transmittances were calculated using an optical constant inthe X-axis direction for light in which its electric field vibratedparallel with the X-axis direction and an optical constant in the Y-axisdirection for light in which its electric field vibrated in the Y-axisdirection. According to the results, because of the optical anisotropicproperties, the transmittances in different polarization directions weredifferent from each other. That is, when a film having opticalanisotropic properties as described above is used for a material for apolarizing element, improvement in properties thereof can be expected.

Example 2

Next, influences of the optical anisotropic properties of the inorganicparticle layer on a polarizing element were investigated. In particular,by using the polarizing elements having the structures shown in FIGS. 1Aand 1B and FIGS. 5A and 5B, the polarization properties thereof wereobtained by a rigorous coupling wave analysis (RCWA). In thismeasurement, as shown in FIGS. 18A and 18B, the structure was formed inwhich inorganic particle layers 45 made of Ge were provided on the glasssubstrate 41 to form a wire grid structure, and the dimensions of theinorganic particle layers 45 were set such that the pitch was 150 nm andthe line width (Ge lattice direction width) was 37.5 nm. In addition,when the inorganic particle layers 45 had the optical anisotropicproperties (by the method shown in FIG. 14A), the thickness was assumedto 100 nm, when the inorganic particle layers 45 had no opticalanisotropic properties (by the method shown in FIG. 15A), the thicknesswas assumed to 10 nm, and the calculation was performed based on theabove conditions. The results are shown in FIG. 19.

According to the results shown in FIG. 19, when the optical anisotropicproperties were not present (data shown by dotted lines indicated as“bulk”), in a visible region having a wavelength of 550 nm or less (thatis, in the green and the blue region) which was important for an opticalengine application such as a projector, although the thickness wassmall, the absorption-axis transmittance was high and the reflectancewas also high as compared to the case in which the optical anisotropicproperties were present (data shown by solid lines indicated as“oblique”). On the other hand, when the optical anisotropic propertieswere present, the absorption-axis transmittance was low and thereflectance was also low. Accordingly, as the absorption type,preferable properties were obtained. In this calculation, when theoptical anisotropic properties were not present, the thickness wasassumed to 10 nm. When the thickness is increased, the absorption-axistransmittance is decreased; however, at the same time, the reflectanceis unfavorably increased. Hence, preferable properties as a polarizingelement having the optical anisotropic properties cannot be obtained bythe thickness adjustment.

Example 3

FIG. 19 shows the example in which the inorganic particle layer was asingle layer, and results similar to those described above can also beobtained for a polarizing element having the multilayer structure ofinorganic particle layers, shown in FIG. 10.

In the polarizing element having a multilayer structure, polarizationproperties obtained when inorganic particle layers of Ge were formed bythe method shown in FIG. 14A to have the optical anisotropic properties,and polarization properties obtained when inorganic particle layers ofGe were formed by the method shown in FIG. 15A were calculated by arigorous coupling wave analysis (RCWA). In addition, the multilayerstructure used in this example was composed of Ge (15 nm), an Alreflection layer (240 nm), a SiO2 dielectric layer (205 nm), and a Geinorganic particle layer (90 nm) provided at the front surface side ofthe substrate in that order therefrom (value in the parenthesesindicates the thickness), and the dimensions of the inorganic particlelayers were set such that the pitch was 150 nm, and the line width (Gelattice direction width) was 37.5 nm. In addition, in order to suppressthe influence of stray light caused by re-reflection of return lightreturning to a polarizing element emission surface, a Ge layer wasprovided at the substrate side closer than the reflection layer. Thecalculation results are shown in FIG. 20.

When the optical anisotropic properties were not present (data shown bydotted lines indicated as “isotropy”), as was the case of the singlelayer (FIG. 19), in a visible region having a wavelength of 550 nm orless, the absorption-axis reflectance was high and the transmission-axistransmittance was low as compared to those obtained when the opticalanisotropic properties were present (data shown by solid lines indicatedas “anisotropy”). Accordingly, as an absorption type polarizing element,the above properties were not preferable. As described above, the effectof the optical anisotropic properties on the polarization properties ofthe polarizing element was significant.

Example 4

When inorganic particle layers having the optical anisotropic propertiesas described above are used for a polarizing element, the polarizationproperties can be improved. In addition, the optical constants of theinorganic particle layer preferably satisfy such that thetransmission-axis direction optical constant is smaller than theabsorption-axis direction optical constant, that is, it is important tosatisfy the relationships in which the transmission-axis directionrefractive index is smaller than the absorption-axis directionrefractive index and in which the transmission-axis direction extinctioncoefficient is smaller than the absorption-axis direction extinctioncoefficient. Examples illustrating the above relationships are shown inFIGS. 21 and 22.

FIG. 21 shows the optical constants of an Ag film (inorganic particlelayer 25) of a polarizing element having the structure shown in FIGS. 5Aand 5B, the Ag film being formed by an oblique sputtering depositionmethod using Ag to form the inorganic particle layer 25. Also in thiscase, the optical anisotropic properties were obtained as was the caseof Ge. However, as shown in FIG. 21, in the vicinity of a wavelength of550 nm, the relationship between the refractive indexes in the X and Ydirections was reversed, and in the vicinity of a wavelength of 440 nm,the relationship between the extinction coefficients in the X and Ydirections was reversed.

As was the case shown in FIG. 17, FIG. 22 shows the results of thepolarization transmittance obtained when the Ag film thickness was 20nm, which were obtained by calculation using the optical constants ofthe Ag film (inorganic particle layer 25) shown in FIG. 21. Thepolarization transmittance was decreased as the wavelength wasdecreased, and in the vicinity of a wavelength of 450 nm, therelationship between the polarization transmittances in the X and Ydirections was reversed. This was caused by the reversion of the opticalconstant shown in FIG. 21, and when the above inorganic particle layeris used for a polarizing element, the reversion property as describedabove is not preferable since it indicates a decrease in polarizationtransmittance. In addition, when the extinction coefficient along theabsorption axis is large, the absorption index is high, and along thetransmission axis, light incident from an air layer is preferablytransmitted without being attenuated and/or reflected. That is, a lowerrefractive index is more preferable (since the refractive index of airis 1). Accordingly, as the preferable optical constants of the inorganicparticle layer, the optical properties in a service bandwidth are notreversed, and the transmission-axis direction optical constant issmaller than the absorption-axis direction optical constant; that is, inother words, the relationships are satisfied so that thetransmission-axis direction refractive index is smaller than theabsorption-axis direction refractive index and so that thetransmission-axis direction extinction coefficient is smaller than theabsorption-axis direction extinction coefficient.

Example 5

Next, the relationship between the optical anisotropic properties andthe inorganic particles of the polarizing element of the embodimentaccording to the present invention was investigated.

(1) Inorganic Particle Layer on a Flat Plate

First, by using a substrate having a smooth and flat surface, which wasa single crystal Si substrate provided with a SiO2 film having athickness of 10 nm, a Ge particle film was formed under the sameconditions as those in Example 1 (oblique sputtering deposition, andsputtering deposition in a direction perpendicular to the substratesurface), and the shape of Ge particles of the Ge particle film wasobserved by an atomic force microscope (hereinafter referred to as“AFM”). The results are shown in FIGS. 23A and 23B.

In a sample obtained by oblique sputtering deposition, shown in FIG.23A, individual particles were clearly observed, and in the particles,shape anisotropic properties were generated such that the diameter inthe direction perpendicular to the Ge incident direction was the majoraxis and the diameter in the Ge incident direction was the minor axis.On the other hand, in a sample formed by sputtering deposition in adirection perpendicular to the substrate surface, shown in FIG. 23B,since the particle size was very small, and a very smooth film surfacewas formed, which were observed at the same magnification as thatdescribed above, the shape of the particle could not be observed.

(2) Polarizing Element 10

Next, a sample of a polarizing element having the structure shown inFIG. 3C was formed. In this example, first, a polymer layer (mr-I 8010Emanufactured by Micro Resist Technology GmbH) applied on a quartzsubstrate was press-molded by a thermal nanoinprinting method using amold having a one-dimensional lattice pattern (pitch: 150 nm, line/spaceratio: 0.7, and depth: 150 nm) so that the mold pattern was transferredto the polymer layer, and the quartz substrate was etched by CF4 gas andAr gas using the polymer layer thus processed as a resist mask, so thatthe substrate 11 provided with the convex portions 17a extending in onedirection at predetermined intervals was obtained. Subsequently, byusing the ion beam sputtering apparatus shown in FIG. 4, the inorganicparticle layers 15 made of Ge having a thickness of 30 nm were formed bythe oblique sputtering deposition of Example 1 at a substrate inclinedangle θ of 5°, and a polarizing element protective layer was formed by avapor phase growth method using SiO2 to have a thickness of 15 nm, sothat the sample was obtained. In addition, a multilayer film ofSiO2/Ta2O5 was formed as an antireflection film at a rear surface sideof the substrate 11 by sputtering. The polarization properties of theobtained polarizing element sample were investigated. As a result, asshown in FIG. 24, optical anisotropic properties were obtained in whichthe transmittance of the absorption axis was lower than that of thetransmission axis.

Analysis of the element distribution was performed for a cross-sectionof this polarizing element sample using a TEM, and it was found that asshown by element distribution mapping in FIG. 25, the inorganic particlelayers 15 made of Ge were each formed from the top part to the sidewallof the convex portion 17a of the substrate primarily formed of Si. Basedon this result, the inorganic particle layer 15 of this polarizingelement sample was observed in detail. The results are shown in FIGS.26A and 26B. FIG. 26A is a schematic cross-sectional view in combinationwith the element analysis result. In addition, FIG. 26B is a schematicplan view, observed from above. As shown in FIG. 26B, the inorganicparticle layers 15 were each formed from the top part to the sidewallpart of the one-dimensional lattice convex portion 17a along thelongitudinal direction thereof, and in addition, the inorganic particlelayers 15 were each observed as a strip or a belt shape formed ofinorganic particles 15a which had shape anisotropic properties and werecontinuously disposed. In addition, each inorganic particle 15a wasclearly observed, and it was also observed that the long axis directionof the inorganic particle was the disposed direction and that the shortaxis direction was perpendicular thereto.

In addition, an electron beam diffraction image of the Ge part in FIG.25 was investigated, and as shown in FIG. 27, since no clear brightlines were observed, it was found that the crystal structure of the Geparticles 15a forming the inorganic particle layer 15 was amorphous. Theamorphous indicates that the Ge particle has no crystallographicorientation. In addition, it has been known that in general, thestructure of a Ge film formed by low-temperature growth tends to beplaced in an amorphous state (Dubey M, Mclane G F, Jones K A, Lareau RT, Eckart D W, Han W Y, Roberts C, Dunkel J, West L C, Mat. Res. Soc.Symp. Proc. Vol. 340, pp. 411 to 416 (1994).

(3) Polarizing Element

Next, a sample of a polarizing element having the structure shown inFIGS. 5A and 5B was formed. In this example, after an aluminum latticehaving a pitch of 150 nm and a lattice depth of 200 nm was formed as thereflection layers 22 on the substrate 21 made of glass (Corning 1737),and the dielectric layers 23 were then formed using SiO2 on thereflection layers 22 to have a thickness of 30 nm, oblique sputteringdeposition was performed under the same conditions as those of thepolarizing element 10 of this example, so that Ge particle layers havinga thickness of 30 nm were formed as the inorganic particle layers 25.Subsequently, as a topmost layer, a film of SiO2 having a thickness of30 nm was formed as a protective film, so that the polarizing elementsample shown in FIGS. 5A and 5B was formed. In FIG. 28, the polarizationproperties of this polarizing element sample are shown. Thetransmittance of the absorption axis was approximately zero, and thereflectance was also low. In addition, the ratio of transmittance inthis case is shown as contrast in FIG. 29. The contrast was 3,000 ormore in a green region centered at a wavelength of 550 nm and was 1,500or more in an entire visible light region including a blue region at awavelength of approximately 450 nm, and hence superior properties as thepolarizing element were obtained.

The cross-section of this polarizing element sample was observed, and itwas found that as shown in a schematic view shown in FIG. 30A, theinorganic particle layers 25 made of Ge were each formed from the toppart to the sidewall of the one-dimensional lattice reflection layer 22and dielectric layer 23, which were provided on the substrate 21.

In addition, in FIGS. 30B and 31, the observation results of thispolarizing element sample viewed from above are shown. FIG. 30B is aschematic view, and FIG. 31 is a SEM image used for forming the aboveschematic view.

The inorganic particle layers 25 were each formed from the top part tothe sidewall part of the one-dimensional lattice dielectric layer 23along the longitudinal direction thereof, and in addition, the inorganicparticle layers 25 were each observed as a strip or a belt shape formedof the inorganic particles 25a which had shape anisotropic propertiesand were continuously disposed. In addition, each inorganic particle 25awas observed such that the long axis direction of the inorganic particlewas the disposed direction and the short axis direction wasperpendicular thereto.

From the above results, it is found that the inorganic particles of thepolarizing element of the example according to the present inventionhave shape anisotropic properties by oblique sputtering deposition andare formed so that when the inorganic particles are disposed in aone-dimensional lattice pattern, the long axis directions of theinorganic particles are aligned in the lattice direction of theone-dimensional lattice. In addition, the inorganic particles are placedin an amorphous state. It is believed that in the present invention, theabove-described properties of the inorganic particles relates to theexpression of the optical anisotropic properties. The particles havingshape anisotropic properties are formed by oblique sputteringdeposition, and the expression of the shape anisotropic properties iscalled Steering Effect (Jikeun Seo, S.-M. Kwon, H.-Y. Kim, and J.-S.Kim, Phys. Rev. B67, 121402 (2003).

In addition, by oblique sputtering deposition, as shown in FIGS. 32A and32B, the shape of a deposited particle is changed with the change inthickness (thickness of an inorganic particle in the growth direction),and the optical anisotropic properties are influenced thereby. That is,when a major axis diameter a of the inorganic particle is larger than athickness b thereof (FIG. 32A), the optical anisotropic properties areshown in two directions (X and Y directions) on the substrate, and theparticle major axis diameter a direction is the absorption axis. On theother hand, when the major axis diameter a of the inorganic particle issmaller than the thickness b thereof (FIG. 32B), the optical anisotropicproperties are shown in the thickness direction of the inorganicparticle and in the in-plane axis direction, and the particle thicknessb direction is the absorption axis; hence, the directions of the opticalanisotropic properties shown in FIGS. 32A and 32b are substantiallyreversed. In the polarizing elements 10 and 20 of the example accordingto the present invention, since the lattice direction is used as theabsorption axis, as the thickness is increased, the polarizationproperties are degraded. Hence, as shown in FIG. 32A, the latticedirection is preferably used as the absorption direction in the state inwhich the particle major axis diameter a is larger than the particlethickness b.

In addition, although a thin film (such as a germanium thin film) havingno optical anisotropic properties is formed on the dielectric layer 23instead of the inorganic particle layer 25, when the thickness of thethin film is optimized, the reflectance in the absorption-axis directioncan be suppressed. However, in this case, the reflection is suppresseddominantly by the interference effect, the wavelength band is narrow,and since absorption occurs in the transmission-axis direction, thetransmission-axis transmittance is disadvantageously decreased.Furthermore, since the interference effect is sensitive to thethickness, in order to obtain desired properties, strict control of thethicknesses of the dielectric layer 23 and the germanium thin film areto be appropriately performed. On the other hand, in the presentinvention, since germanium particles having optical anisotropicproperties are used, the degree of designing freedom is high, and alsomanufacturing can be easily performed.

Accordingly, by a rigorous coupling wave analysis (RCWA), the opticalanisotropic properties of the inorganic particle layer 25 of thepolarizing element 20 were simulated for two cases in which a thin filmand fine particles were used for forming the inorganic particle layer 25in order to obtain the difference therebetween. In this case, thereflection layer 22 was formed from Al to have a thickness of 200 nm, alattice pitch of 150 nm, and an Al width of 45 nm, the dielectric layer23 was formed from SiO2 to have a thickness of 30 nm. In addition, thedependences of the absorption-axis reflectance, the transmission-axistransmittance, and the transmission contrast on the thickness of the Gethin film and the thickness of the Ge particle were calculated at awavelength of 450 nm. In addition, as the optical constants of the Gethin film, the values in FIG. 15B were used, and in order to obtain theoptical constants of the Ge particles, in consideration of an increasein anisotropic properties when the Ge particles are formed into alattice pattern, calculation was performed assuming that, in accordancewith the model shown in FIG. 33, the particles sufficiently smaller thana wavelength of incident light were distributed in the dielectric layerand aligned in the axis direction. Furthermore, calculation wasperformed assuming that the volume fraction of Ge in the dielectriclayer 23 was 0.4, and the aspect ratio of Ge was 20.

The results are shown in FIGS. 34A to 34C. FIG. 34A shows the results ofthe absorption-axis reflectance, FIG. 34B shows the results of thetransmission-axis transmittance, and FIG. 34C shows the results of thetransmission contrast. It was found that compared to the case of the Gethin film, in the case of the Ge particles, the contrast was not rapidlychanged, the transmittance was high, and the thickness range in whichthe reflectance could be decreased was wide.

Example 6

Next, the relationship between the aspect ratio of the inorganicparticle and the contrast of the polarizing element was investigated.

(1) Oblique Sputtering Deposition on a Flat Plate

First, Ge particle layers having a thickness of 30 nm were formed on aflat Si substrate at substrate inclined angles θ of 20° and 10° usingthe ion beam sputtering apparatus shown in FIG. 4. The samples obtainedthereby were observed by a SEM, and any 40 Ge particles in a SEM imagewere extracted and were measured to obtain the size (long diameter ormajor axis diameter (major axis length) and short diameter or minor axisdiameter (minor axis length)), so that the aspect ratio was obtained.

FIGS. 35A and 35B are each showing the result of the aspect ratio usinga histogram analysis. According to the results shown by the histogram,the distribution tends to shift toward a high aspect ratio side in thecase shown in FIG. 35B (substrate inclined angle θ: 10°) as compared tothe case shown in FIG. 35A (substrate inclined angle θ: 20°). Inaddition, the average long axis lengths of the Ge particles were 30 nmand 63 nm at substrate inclined angles θ of 20° and 10°, respectively,and the average aspect ratios were 3.2 and 4.0 at substrate inclinedangles θ of 20° and 10°, respectively.

In addition, by using samples which included Ge particle layers having athickness of 10 nm formed on a flat glass substrate (Corning 1737) atsubstrate inclined angles θ of 20° and 10° by the ion beam sputteringapparatus shown in FIG. 4, the transmittance was measured, and thetransmittance ratio at a wavelength of 550 nm was obtained as thecontrast. In addition, an x direction and a y direction correspond tothose shown in FIG. 14A. The results are shown in Table 1. As thesubstrate inclined angle θ was decreased, the aspect ratio of the Geparticle tended to increase, and in addition, the contrast also tendedto increase.

TABLE 1 Substrate Ge particle inclined angle Transmittance (%) Long axisAspect θ (degree) x direction y direction Contrast length (nm)* ratio*20 63.2 72.4 1.1 30 3.2 10 58.4 74.9 1.3 63 4.0 *average value

(2) Polarizing Element 10

Polarizing element samples were formed under the same conditions asthose for the polarizing element 10 of Example 5 except that the obliquesputtering deposition for forming the inorganic particle layers 15 wereperformed at substrate inclined angles θ of 10° and 20°. Thetransmittances of this sample in the transmission axis and theabsorption axis were measured, and the transmittance ratio at awavelength of 550 nm was obtained as the contrast. The results are shownin FIG. 36 and Table 2. Also in the polarizing element of this exampleaccording to the present invention, as the substrate inclined angle θwas decreased, the contrast tended to increase.

TABLE 2 Substrate inclined angle Transmittance (%) θ (degree) xdirection y direction Contrast 20 88.3 37.2 2.4 10 90.7 33.9 2.7

As described above, although inorganic particles having shapeanisotropic properties can be formed into films on the substrate byoblique sputtering deposition, the aspect ratio, which is a ratiobetween the major axis diameter and the minor axis diameter of theinorganic particle, depends on the incident angle (substrate inclinedangle θ in FIG. 4) of the inorganic particles, and as the angle isdecreased, the aspect ratio increases. In addition, as the aspect ratioincreases, the transmission contrast simultaneously increases. Asdescribed above, using Steering Effect by the oblique sputteringdeposition, a polarizing element having superior properties can berealized.

Example 7

By changing the type of film formation method (dry process), Al particlelayers were formed on the substrate. In this example, the followingthree dry processes were used.

(a) Electron Beam Deposition (FIG. 37A)

A substrate inclined by 10° with respect to the normal line direction ofan evaporation source containing Al was set at a distance of 80 cm apartfrom the evaporation source, and electron beam deposition was performedat a film formation rate of 0.3 nm/sec.

(b) Magnetron Sputtering (FIG. 37B)

A substrate inclined by 10° with respect to the normal line direction ofan Al target was set at a distance of 40 cm apart from the target, andmagnetron sputtering deposition was performed at a film formation rateof 0.1 nm/sec.

(c) Ion Beam Sputtering (FIG. 37C)

The sputtering deposition method shown in FIG. 4 by way of example inthe present invention was performed. In this method, a substrate was setat an angle of 45° at a distance of approximately 15 cm apart from theAl target, and ion beam sputtering deposition was performed at a filmformation rate of 0.2 nm/sec.

In this example, the same substrate as the substrate 11 of thepolarizing element 10 of Example 5 was used and was set so that the Alincident direction was set along a direction (y direction) perpendicularto the lattice longitudinal direction (x direction) as shown in FIG.14A. In addition, the thicknesses of the Al particle layers were all setto 10 nm.

The transmittances of the samples thus obtained were measured. Theresults are shown in FIG. 38.

Among the three types of samples, since the sample obtained by the ionbeam sputtering had a high transmittance, and the difference intransmittance in the x and y directions was large, it was found that ionbeam sputtering was the most favorable film formation method.

Example 8

Among the polarizing elements of the embodiments, in the polarizingelement 20 having the structure shown in FIGS. 5A and 5B, when theheight (thickness) of the reflection layer 22 is changed, thetransmission contrast of the polarizing element can be easilycontrolled. As one example, in FIG. 39, the calculation result of therelationship between the transmission contrast and the reflection layerthickness (Al height) of the one-dimensional lattice reflection layer 22made of Al and having a pitch of 150 nm and an aluminum width of 37.5 nmare shown, the result being obtained by a rigorous coupling waveanalysis (RCWA).

In addition, in the polarizing element 20 having the structure shown inFIGS. 5A and 5B, when the height (thickness) of the dielectric layer 23is changed, the optical properties of the polarizing element can beeasily controlled. In this example, the one-dimensional latticereflection layers 22 made of Al and having a thickness (Al height) of200 nm, a pitch of 150 nm, and a lattice width of 50 nm, the dielectriclayers 23 made of SiO2 and having different thicknesses of 0, 19, 37,56, and 74 nm obtained by RF sputtering deposition, and the inorganicparticle layers 25 made of Ge particles and having a thickness of 30 nmwere provided on the substrate 21 made of glass (Corning 1737) to formfive types of samples of the polarizing element 20 of the exampleaccording to the present invention, and by using the samples thusobtained, the relationships of the dielectric layer thickness with thetransmission-axis transmittance, the contrast, and the absorption-axisreflectance were obtained at wavelengths of 450, 550, and 650 nm. Theresults are shown in Table 3.

TABLE 3 Absorption-axis Transmission-axis Dielectric reflectance (%)transmittance (%) Contrast layer thick- λ = λ = λ = λ = λ = λ = λ = λ =λ = ness (nm) 450 nm 550 nm 650 nm 450 nm 550 nm 650 nm 450 nm 550 nm650 nm  0 19 18 26 72 82 86 1,800 2,929 3,440 19  8  3  3 72 83 86 3,1303,952 4,315 37  3  2  2 78 84 86 2,167 3,652 3,913 56 11 10  8 75 83 851,875 3,773 4,739 74 30 22 21 73 85 86 1,460 4,250 5,369

From the results thus obtained, for example, when it is desired todecrease the absorption-axis reflectance, the thickness of thedielectric layer 23 may be set in the range of 19 to 37 nm. In addition,when the polarizing element is used for application in which reflectionmay not cause any serious problems, the thickness of the dielectriclayer 23 may be decreased to zero. This means a decrease in number ofmanufacturing steps, and hence the productivity can be improved. Inaddition, since a high contrast is realized at a wavelength in the rangeof 450 to 650 nm, the polarizing element can be preferably applied to aprojector used in a wide service bandwidth.

On the other hand, as for the transmittance, a high transmittance isrealized such as 70% or more at a wavelength of 450 nm and 80% or moreat wavelengths of 550 and 650 nm. When the pitch of the lattice isfurther decreased, the transmittance can be further improved.

In addition, the contrast can be adjusted by the height of the metallattice. When a higher contrast is preferable, the height of an Allattice may be increased, and when a lower contrast is preferable, theheight may be decreased.

Next, in FIG. 40, the polarization properties are shown which wereobtained when the height of an Al reflection layer of a polarizingelement having the same structure as that of the polarizing element 20of Example 5 was set to 30 nm. In this case, since the thickness of thereflection layer was small (the Al height was low), the contrast in ablue region was approximately 3; however, the reflectance was suppressedto 2% or less by the effect of Ge fine particles as the case shown inFIG. 28. In the case of a polarizing element having the properties asdescribed above, as shown by the SEM image of FIG. 31, Ge particles aredeposited on sidewalls of the convex portions formed of the reflectionlayers and the dielectric layers, and hence a superior shape is formedas an anisotropic optical absorbing element. The above may also be saidfor the polarizing element 10 shown in FIGS. 1A and 1B and FIGS. 3A to3C.

In the polarizing elements of the example according to an embodiment,when the lattice shape (the shapes and heights of the convex portions14a in FIG. 2 and the reflection layer 22/dielectric layer 23 in FIGS.5A and 5B, the pitch of the one-dimensional lattice pattern, and thelike) and Steering Effect (the size, the aspect ratio, the alignmentproperties, and the like of the inorganic particles) are used incombination, a fine particle shape preferably used for an absorptiontype polarizing element can be realized.

Example 9

In the polarizing element 20 shown in FIGS. 5A and 5B, as anemission-surface stray-light countermeasure (ghost countermeasure),after a rubbing treatment is performed on the surface of the substrate21 so as to form a texture structure in which fine streaks are formed inone direction so as to correspond to the disposed direction of theinorganic particles 25a which are subsequently formed, a thin film (thinfilm to be formed into the antireflection layers 29 (hereinafterreferred to as “antireflection film”)) made of inorganic particleshaving shape anisotropic properties may be formed on the surfaceprocessed by the rubbing treatment so as to correspond to the disposeddirection of the inorganic particles 25a. In particular, when a texturestructure is mechanically formed in the surface of the substrate 21 by apolishing material, such as a polishing tape, and an antireflection filmmade of inorganic particles is then formed by an oblique sputteringdeposition method, inorganic particles having shape anisotropicproperties by Steering Effect can be obtained as is the case of theinorganic particle layers 25 to be formed on the lattice; hence, thepolarization effect of the inorganic particles is enhanced, and as aresult, a ghost suppression effect can be enhanced. Hereinafter, aparticular example which was actually carried out will be described.

In this example, by using D20000 manufactured by Nihon Micro CoatingCo., Ltd. as a polishing material, the effect described above wasverified. Corning 1737 glass was used as the substrate, and the texturewas formed by rubbing the surface of the substrate in one direction withD20000. The substrate surface after the texture was formed was measuredby an AFM, and the measurement result is shown in FIG. 41. Thehorizontal axis indicates the position on the substrate, and thevertical axis indicates the height of irregularities. The average pitchof the irregularities of the substrate surface was 160 nm. In addition,the transmittances of the substrate were measured before and after theformation of the texture, and it was found that the transmittancesbefore and after the formation of the texture were not changed from eachother, as shown in FIG. 42. That is, by the method described above,precise machining on the order of nanometers can be easily performedwithout degrading the transmission properties of the substrate.

Subsequently, by using the ion beam sputtering apparatus shown in FIG.4, oblique sputtering deposition was performed on the textured substrateat a substrate incident angle θ of 5° to form an antireflection film ofGe particles having a thickness of 10 nm. In this step, the sputteringdeposition was performed on the substrate so that the relationshipbetween the Ge incident direction and the substrate was set such thatthe y direction in FIG. 14A was the texture longitudinal direction. Byusing the sample thus obtained, the shapes of the Ge particles of theantireflection film were observed by an AFM, and it was found that theGe particles were aligned along the texture as shown in FIG. 43.

In FIG. 44, the transmission properties of this sample are shown. Inaddition, for comparison purposes, by using a glass substrate made ofCorning 1737, which was not processed by the rubbing treatment, and anantireflection film which was formed under the same conditions asdescribed above, a comparative sample was formed, and the transmissionproperties thereof were also investigated. In FIG. 44, “texturedsubstrate” indicates the example sample, and “non-textured substrate”indicates the comparative sample. From the results shown in FIG. 44,although both samples showed polarization properties by Steering Effect;however, in the case of the “textured substrate”, the transmittance inthe x direction was much higher than that in the y direction, and hencethe difference in transmittance between in the x and the y directions islarge, so that superior polarization properties are obtained.

According to an embodiment, the example sample (the textured substrateprovided with the antireflection film formed thereon) is used, and thelayered structure of the polarizing element 20 shown in FIGS. 5A and 5Bis formed thereon. Subsequently, when the reflection layers 22 and thedielectric layers 23 are formed by pattern processing, theantireflection film is simultaneously processed to have a latticepattern, so that the antireflection layers 29 are formed. As a result,the effect of the ghost countermeasure can be enhanced, and at the sametime, as the polarizing element, improvement in transmission contrastproperties can also be expected.

Example 10

According to the above examples, in the most cases, the polarizingelements were described using Ge by way of example; however, inorganicparticles having shape anisotropic properties can be formed usinganother material. Hence, by appropriately selecting a material, apolarizing element to be used at a targeted wavelength can be formed.

FIGS. 45 and 46 are graphs showing polarization properties of thepolarizing element 10 shown in FIG. 3C including Si and Sn,respectively, as inorganic particles having a thickness of 30 nm. Inthis case, the antireflection films on the rear surface are not formed.In the cases in which the above materials are used, although thereflectance is slightly higher than that of Ge, the transmission-axispolarization properties in a blue region are high, and depending onapplications, the above materials may also be used for a polarizingelement.

It should be understood that various changes and modifications to thepresently preferred embodiments described herein will be apparent tothose skilled in the art. Such changes and modifications can be madewithout departing from the spirit and scope of the present subjectmatter and without diminishing its intended advantages. It is thereforeintended that such changes and modifications be covered by the appendedclaims.

The invention is claimed as follows:
 1. A polarizing element comprising:a first polarizing element including a first substrate transparent tovisible light, and first inorganic particle layers in each of whichfirst inorganic particles are linearly disposed on the first substrate,the first inorganic particle layers being disposed on the firstsubstrate at predetermined intervals to form a wire grid structure,wherein the first inorganic particles each have an elliptical shape witha major axis in a disposed direction and a minor axis in a directionperpendicular thereto, wherein the first polarizing element furtherincludes convex portions, which are made of a material transparent tovisible light and which extend in one direction, provided on the firstsubstrate, wherein the first inorganic particle layers are each providedon a top part or at least one of sidewall parts of each of the convexportions; and a second polarizing element including a second substratetransparent to visible light, and second inorganic particle layers ineach of which second inorganic particles are linearly disposed on thesecond substrate, the second inorganic particle layers being disposed onthe second substrate at predetermined intervals to form a wire gridstructure, wherein the second inorganic particles each have shapeanisotropic properties in which a diameter in a disposed direction islong and a diameter in a direction perpendicular thereto is short,wherein the second polarizing element further includes reflection layersof strip-shaped thin films, which are made of a metal and which extendin one direction, provided on the second substrate at predeterminedintervals; and first dielectric layers provided on the reflectionlayers, wherein the second inorganic particle layers are provided on thefirst dielectric layers at positions corresponding to those of thestrip-shaped thin films, and wherein the first and second substrates areadhered to each other at rear surfaces thereof.
 2. The polarizingelement according to claim 1, wherein a refractive index of the firstinorganic particles in the disposed direction is larger than that of thefirst inorganic particles in the direction perpendicular to the disposeddirection.
 3. The polarizing element according to claim 2, wherein anextinction coefficient of the first inorganic particles in the disposeddirection is larger than that of the first inorganic particles in thedirection perpendicular thereto.
 4. The polarizing element according toclaim 1, wherein the first inorganic particle layers are formed by anoblique sputtering method.
 5. The polarizing element according to claim1, wherein the first inorganic particles include a single elementselected from the groups consisting of: Al, Ag, Cu, Au, Mo, Cr, Ti, W,Ni, Fe, Si, Ge, Te, and Sn, an alloy thereof, or a silicidesemiconductor material.
 6. The polarizing element according to claim 1,wherein the first inorganic particles include a semiconductor materialhaving a bandgap energy of 3.1 eV or less.
 7. The polarizing elementaccording to claim 1, wherein the first inorganic particle layers have athickness of 200 nm or less.
 8. The polarizing element according toclaim 1, wherein the second substrate is processed by a rubbingtreatment so that the direction of the rubbing treatment corresponds tothe disposed direction of the first inorganic particles, the polarizingelement further comprising antireflection layers of inorganic particleshaving shape anisotropic properties, the antireflection layers beingprovided on the surface of the second substrate so that the direction ofthe inorganic particles corresponds to the disposed direction of thefirst inorganic particles.
 9. The polarizing element according to claim1, further comprising second dielectric layers, the second inorganicparticle layers and the second dielectric layers forming laminates,wherein at least one of the laminates is provided on each of the firstinorganic particle layers.
 10. The polarizing element according to claim1, further comprising a polarizing element protective layer transparentto light in a service bandwidth as an outermost surface.
 11. A liquidcrystal projector comprising: a lamp; a liquid crystal panel; and apolarizing element including a substrate transparent to visible light;and first inorganic particle layers in each of which first inorganicparticles are linearly disposed on the substrate, the first inorganicparticle layers being disposed on the substrate at predeterminedintervals to form a wire grid structure, wherein the first inorganicparticles each have an elliptical shape with a major axis in a disposeddirection and a minor axis in a direction perpendicular thereto, whereinthe first polarizing element further includes convex portions, which aremade of a material transparent to visible light and which extend in onedirection, provided on the first substrate, wherein the first inorganicparticle layers are each provided on a top part or at least one ofsidewall parts of each of the convex portions; and a second polarizingelement including a second substrate transparent to visible light, andsecond inorganic particle layers in each of which second inorganicparticles are linearly disposed on the second substrate, the secondinorganic particle layers being disposed on the second substrate atpredetermined intervals to form a wire grid structure, wherein thesecond inorganic particles each have shape anisotropic properties inwhich a diameter in a disposed direction is long and a diameter in adirection perpendicular thereto is short, wherein the second polarizingelement further includes reflection layers of strip-shaped thin films,which are made of a metal and which extend in one direction, provided onthe second substrate at predetermined intervals; and first dielectriclayers provided on the reflection layers, wherein the second inorganicparticle layers are provided on the first dielectric layers at positionscorresponding to those of the strip-shaped thin films, and wherein thefirst and second substrates are adhered to each other at rear surfacesthereof.
 12. A wire grid type polarizing element for light absorptioncomprising: a substrate transparent to visible light; a plurality ofreflection layers including strip-shaped thin films, which include ametal and which extend in one direction, provided on the substrate atpredetermined intervals; dielectric layers formed on the reflectionlayers; inorganic particle layers formed at positions corresponding topositions of the strip-shaped thin films, on the dielectric layers,wherein inorganic particles forming the inorganic particle layers eachhave shape anisotropic properties in which a diameter in a disposeddirection is long and a diameter in a direction perpendicular thereto isshort, and a crystal structure of the inorganic particles forming theinorganic particle layers is amorphous.
 13. The wire grid typepolarizing element for light absorption according to claim 12, whereinthe substrate has a concave-convex portion member formed on thereon thathas a pitch, line width/pitch, concave portion depth or convex portionheight, convex portion length, and top line width/bottom line width ofthe concave-convex portion member in the following ranges: 0.05μm<pitch<0.8 μm; 0.1<line width/pitch<0.9; 0.01 μm<concave portiondepth<0.2 μm; 0.05 μm<convex portion length; and 1.0≥top linewidth/bottom line width.
 14. The wire grid type polarizing element forlight absorption according to claim 12, wherein the substrate has aconcave-convex portion member formed on thereon that has a pitch, linewidth/pitch, thin film height, and thin film length of theconcave-convex portion member in the following ranges: 0.05 μm<pitch<0.8μm; 0.1<line width/pitch<0.9; 0.01 μm<thin film height<1 μm; and 0.05μm<thin film length.
 15. The wire grid type polarizing element for lightabsorption according to claim 12, wherein the inorganic particle layershave a thickness of 200 nm or less.
 16. The wire grid type polarizingelement for light absorption according to claim 12, further comprisingan antireflection layer being provided between the substrate and thereflection layers.
 17. The wire grid type polarizing element for lightabsorption according to claim 12, wherein the dielectric layer includesa dielectric material selected from the group consisting of a siliconcompound, an aluminum compound, a magnesium compound and combinationsthereof.
 18. The wire grid type polarizing element for light absorptionaccording to claim 12, further comprising a protective layer formed asan outmost surface of the wire grid type polarizing element for lightabsorption.
 19. The wire grid type polarizing element for lightabsorption according to claim 18, wherein the protective layer is aself-organizing film.
 20. The wire grid type polarizing element forlight absorption according to claim 18, wherein the protective layer isPerfluorodecyltrichlorosilane (FDTS) or Octadecanetrichlorosilane (OTS).21. The wire grid type polarizing element for light absorption accordingto claim 18, wherein the protective layer is a silane-basedself-organizing film.
 22. The wire grid type polarizing element forlight absorption according to claim 18, wherein the protective layerincludes a hydrophobic self-organizing film.
 23. The wire grid typepolarizing element for light absorption according to claim 18, furthercomprising an adhesive layer, wherein the self-organizing film isprovided on the adhesive layer.
 24. The wire grid type polarizingelement for light absorption according to claim 23, wherein the adhesivelayer includes SiO2.
 25. The wire grid type polarizing element for lightabsorption according to claim 12, wherein the substrate includes glass,sapphire, or quartz.
 26. The wire grid type polarizing element for lightabsorption according to claim 12, wherein the wire grid type polarizingelement for light absorption is on an incident side of the light of aliquid crystal panel or an emission side of the light of a liquidcrystal panel.
 27. The wire grid type polarizing element for lightabsorption according to claim 12, wherein the wire grid type polarizingelement for light absorption is included in a transmission type liquidcrystal projector.
 28. A liquid crystal display comprising: a liquidcrystal panel; an incident side polarizing side plate; and an emissionside polarizing side plate; wherein at least one of the incident sidepolarizing side plate or the emission side polarizing side platecomprises, a substrate transparent to visible light; a plurality ofreflection layers including strip-shaped thin films, which include ametal and which extend in one direction, provided on the substrate atpredetermined intervals; dielectric layers formed on the reflectionlayers; and inorganic particle layers formed at positions correspondingto positions of the strip-shaped thin films, on the dielectric layers,wherein inorganic particles forming the inorganic particle layers eachhave shape anisotropic properties in which a diameter in a disposeddirection is long and a diameter in a direction perpendicular thereto isshort, and a crystal structure of the inorganic particles forming theinorganic particle layers is amorphous.
 29. A transmission type liquidcrystal projector comprising: a liquid crystal panel; and a polarizingplate, wherein the polarizing plate comprises: a substrate transparentto visible light, an incident side polarizing side plate, and anemission side polarizing side plate, wherein at least one of theincident side polarizing side plate or the emission side polarizing sideplate comprises, a plurality of reflection layers including strip-shapedthin films, which include a metal and which extend in one direction,provided on the substrate at predetermined intervals, dielectric layersformed on the reflection layers, and inorganic particle layers formed atpositions corresponding to positions of the strip-shaped thin films, onthe dielectric layers, wherein inorganic particles forming the inorganicparticle layers each have shape anisotropic properties in which adiameter in a disposed direction is long and a diameter in a directionperpendicular thereto is short, and a crystal structure of the inorganicparticles forming the inorganic particle layers is amorphous.